Lasermate offers InGaAs (indium gallium arsenide) PIN photodiode chips and arrays that are used for detecting light in the near-infrared region and commonly used in telecommunications, fiber optics, and spectroscopy applications. As compared to silicon photodiodes, InGaAs photodiodes exhibit higher sensitivity in the near-infrared region. We also supply packaged InGaAs photodiodes and InGaAs fiber-coupled receptacle/pigtail assemblies.
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High speed InGaAs photodiode chip in 1x4 array form with bandwidth >1.5GHz designed for use in fiber optic data communication applications. -
High speed, low dark current, low capacitance, 75um InGaAs photodiode chip designed for long wavelength 2.5Gbps fiber optic application. -
High-performance InGaAs photodiode die offering high responsivity, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
High quality large-area InGaAs PIN photodiode chip with aperture of 300um, low capacitance and low dark current, high responsivity at 1310nm and 1550nm. -
High quality large-area InGaAs PIN photodiode chip with aperture of 1.0mm, low capacitance and low dark current, high responsivity at 1310nm and 1550nm. -
Large-area InGaAs PIN photodiode chip with aperture of 1.5mm that exhibits low capacitance, low dark current, and high responsivity at 1310nm and 1550nm. -
Large-area InGaAs PIN photodiode chip with aperture of 3.0mm, low capacitance and low dark current, high responsivity at 1310nm and 1550nm. -
Highly reliable, high responsivity, 0.9um-1.7um, InGaAs quadrant PIN photodiode chip. Ideal for LIDAR, beam alignment, light spot position detection, and remote optical control applications. -
High-performance InGaAs photodiode die in non-hermetic application offering high responsivity, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications.
