- High responsivity from 400nm to 1100nm
- High Gain up to M=400, TO-5 Can Package
- High reliability, low dark current
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- High responsivity from 0.95um to 1.65um
- High speed response in CLCC ceramic package
- High reliability, low leakage current and noise
- Large-area 200um active diameter
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 3mm diameter active area. -
Large area InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 455um diameter active area. -
Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
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High responsivity at 850nm, GaAs photodiode, LC ROSA with 1.5GHz bandwidth. The photodiode is designed for use in fiber optic data communication applications. -
Highly reliable, high responsivity, 0.9um-1.7um, InGaAs quadrant PIN photodiode chip. Ideal for LIDAR, beam alignment, light spot position detection, and remote optical control applications. -
High speed, low dark current and low capacitance, InGaAs PIN Photodiode, 1300nm, Dia. 120um Active Area -
- Response wavelength 940nm
- High sensitivity, low dark current
- High speed response in 3030 package
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High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V -
High speed 4.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 115ps Rise Time, 1260-1620nm, 3.3V -
High speed 6.25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 85ps Rise Time, 1260-1620nm, 3.3V -
High speed 10Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with long cap lens, 50ps Rise Time, 1260-1620nm, 3.3V -
Large area and high responsivity InGaAs PIN photodiode in TO-46 package at 800nm-1700nm wavelength spectral range with active area of 1.0mm diameter. Ideal for optical sensor and optical power meter, industrial automatic control, science analysis and experiment, space light detect equipment, response spectrum testing. -
High speed InGaAs photodiode chip in 1x4 array form with bandwidth >1.5GHz designed for use in fiber optic data communication applications. -
High speed, low dark current, low capacitance, 75um InGaAs photodiode chip designed for long wavelength 2.5Gbps fiber optic application. -
High-performance InGaAs photodiode die offering high responsivity, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
High quality large-area InGaAs PIN photodiode chip with aperture of 300um, low capacitance and low dark current, high responsivity at 1310nm and 1550nm.
