- 650nm responsivity up to 0.44mA/mW
- 2.5mm Large active area
- 2-pin, TO-5 can package
- High reliability, low dark current
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- 650nm responsivity up to 0.44mA/mW
- 2.5mm Large active area
- 3-pin, TO-5 can package
- High reliability, low dark current
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- 1064nm responsivity up to 0.32mA/mW
- 3.2mm Large active area, TO-5 can package
- High reliability, low dark current
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- 1064nm responsivity up to 0.32mA/mW
- 3.2mm Large active area, TO-5 can package
- High reliability, low dark current
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- 980nm responsivity up to 0.67mA/mW
- 4.2mm Large active area, TO-5 can package
- High reliability, low dark current
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- 980nm responsivity up to 0.67mA/mW
- 4.2mm Large active area, TO-5 can package
- High reliability, low dark current
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- Spectral range 200nm to 1100nm
- 3.2mm Large active area
- 2-pin TO-5 can package
- High reliability, low dark current
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- Spectral range 200nm to 1100nm
- 3.2x3.2mm Large active area
- 3-pin TO-5 can package
- High reliability, low dark current
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- 405nm responsivity about 0.2mA/mW
- 5.9mm Ultra large active area, TO-8 can package
- High reliability, low dark current
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Large area InGaAs PIN photodiode in TO-39 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 3mm diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
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Large area InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 455um diameter active area. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 455um diameter active area.
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Large area InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area.
