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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area.
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InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 950um diameter active area. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
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Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um. -
Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um.
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Large area InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area.
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InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area.
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Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area.
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Large area InGaAs PIN photodiode in TO-39 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area.
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High speed, high sensitivity, 1.25Gbps, 770-860nm, fiber-coupled GaAs amplified photodiode receiver module integrated with transimpedance amplifier (TIA) in single mode fiber pigtailed coaxial package with optional FC/ST/SC connector. -
Hermetically sealed high speed pigtailed photodiodes designed for optical communications applications. The devices are available in FC, SC or ST connector types and is capable of reaching up to 2.5Gbps data rate operation.
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High speed, high reliability GaAs PIN photodiode without TIA, LC receptacle with 5GHz bandwidth. The photodiode is designed for use in 4.25Gb/s fiber optic data communication applications. -
High speed, high responsivity, GaAs photodiode with preamplifier in LC receptacle with flexible circuit designed for 25Gb/s data rate operation. -
High speed, 1.25Gbps, 1100-1630nm wavelength range, fiber-coupled InGaAs PIN photodiode receiver module integrated with transimpedance amplifier (TIA) in FC or ST connector style receptacle packages.
Lasermate Group, Inc.
19608 Camino De Rosa
Walnut, CA 91789
USA
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