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High speed, high responsivity, InGaAs photodiode with preamplifier in LC receptacle with flexible circuit designed for 25Gb/s data rate operation. -
High speed GaAs photodiode with preamplifier in LC receptacle with flexible circuit designed for 25Gb/s data rate operation. -
- Spectral range 400nm to 1100nm
- High speed up to 2.5GHz
- TO-46 package with 2mm flat window cap
- High reliability, Low capacitance
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- 1064nm responsivity up to 0.27mA/mW
- 1.2mm Large active area
- 2-pin, TO-46 package with 2mm flat window cap
- High reliability, Low dark current
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- Very fast rise time up to 250ps
- High speed in 2-pin, TO-46 can package
- 0.5mm diameter Active area
- High reliability, ultra-low dark current
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- Spectral range 200nm to 1100nm
- 1.2mm Large active area
- TO-46 with 2mm UV Flat window, 2-pin
- High reliability, low dark current
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- Spectral range 200nm to 1100nm
- 1mm Large active area, TO-46 can package
- High reliability, low dark current
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- Spectral range 200nm to 1100nm
- 3.2mm Large active area
- 2-pin TO-5 can package
- High reliability, low dark current
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- 405nm responsivity about 0.2mA/mW
- 5.9mm Ultra large active area, TO-8 can package
- High reliability, low dark current
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- 980nm responsivity up to 0.67mA/mW
- 4.2mm Large active area, TO-5 can package
- High reliability, low dark current
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- 1064nm responsivity up to 0.32mA/mW
- 3.2mm Large active area, TO-5 can package
- High reliability, low dark current
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- 650nm responsivity up to 0.44mA/mW
- 2.5mm Large active area
- 2-pin, TO-5 can package
- High reliability, low dark current
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- High responsivity from 400nm to 1100nm
- 10mm Diameter Large active area, Ceramic package
- High reliability, low dark current
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- High responsivity from 400nm to 1100nm
- 6mm Large active area, Ceramic package
- High reliability, low dark current
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- High responsivity from 400nm to 1100nm
- High Gain up to M=300
- TO-46 Can Package, Ball lens
- High reliability, low dark current
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- High responsivity from 400nm to 1100nm
- High Gain up to M=300, TO-46 Can Package
- High reliability, low dark current
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- High responsivity from 400nm to 1100nm
- High Gain up to M=300, TO-46 Can Package
- High reliability, low dark current
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- High responsivity from 400nm to 1100nm
- High Gain up to M=400
- TO-46 Can Package, Ball lens
- High reliability, low dark current
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- High responsivity from 400nm to 1100nm
- High Gain up to M=400, TO-5 Can Package
- High reliability, low dark current
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- High responsivity from 0.95um to 1.65um
- High speed response in CLCC ceramic package
- High reliability, low leakage current and noise
- Large-area 200um active diameter
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 3mm diameter active area. -
Large area InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 455um diameter active area. -
Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
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High responsivity at 850nm, GaAs photodiode, LC ROSA with 1.5GHz bandwidth. The photodiode is designed for use in fiber optic data communication applications. -
Highly reliable, high responsivity, 0.9um-1.7um, InGaAs quadrant PIN photodiode chip. Ideal for LIDAR, beam alignment, light spot position detection, and remote optical control applications. -
- Response wavelength 940nm
- High sensitivity, low dark current
- High speed response in 3030 package
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High speed, low dark current and low capacitance, InGaAs PIN Photodiode, 1300nm, Dia. 120um Active Area -
High speed 10Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with long cap lens, 50ps Rise Time, 1260-1620nm, 3.3V -
High speed 6.25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 85ps Rise Time, 1260-1620nm, 3.3V -
High speed 4.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 115ps Rise Time, 1260-1620nm, 3.3V -
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V -
High speed 1.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 1260-1620nm, 3.3V -
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V -
Large-area InGaAs PIN photodiode chip with aperture of 3.0mm, low capacitance and low dark current, high responsivity at 1310nm and 1550nm. -
Large-area InGaAs PIN photodiode chip with aperture of 1.5mm that exhibits low capacitance, low dark current, and high responsivity at 1310nm and 1550nm. -
High quality large-area InGaAs PIN photodiode chip with aperture of 1.0mm, low capacitance and low dark current, high responsivity at 1310nm and 1550nm.
Lasermate Group, Inc.
19608 Camino De Rosa
Walnut, CA 91789
USA
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Contact Us
Sales: (909) 718-0999
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