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18 Products
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36 Products
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54 Products
PDT-A13P4-1GC3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 1.25Gbps
High speed 1.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P4-1GD3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 1.25Gbps
High speed 1.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P4-1MA4 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1310nm, 125MHz
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V
Details
PDT-A13P4-1MB4 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1310nm, 125MHz
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V
Details
PDT-A13P4-2GA3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 2.5Gbps
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P4-2GB3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 2.5Gbps
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P4-2GC3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 2.5Gbps
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P5-10GA3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 10Gb/s
High speed 10Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with long cap lens, 50ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P5-10GB3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 11.3-Gb/s
High speed 11.3Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with short cap lens, 50ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P5-1MA4 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 125MHz
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V
Details
PDT-A13P5-1MB4 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 125MHz
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V
Details
PDT-A13P5-1MC4 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 125MHz
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V
Details
PDT-A13P5-25GA3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1360nm, 25Gb/s
High speed 25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 21ps Rise Time, 1260-1360nm, 3.3V
Details
PDT-A13P5-2GA3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 2.5Gbps
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P5-2GB3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 2.5Gbps
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P5-2GC3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 2.5Gbps
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P5-2GD3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 2.5Gbps
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P5-2GE3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 2.5Gbps
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P5-4GA3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 4.25Gbps
High speed 4.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 115ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P5-4GB3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 4.25Gbps
High speed 4.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 150ps (max) Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P5-6GA3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 6.25Gbps
High speed 6.25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 85ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A85A30 – GaAs PIN Photodiode TO-46 for 850nm Emitter
Lasermate offers high speed response GaAs PIN photodiode in TO-46 can with high responsivity at 850nm, low dark current and low capacitance.
Details
PDT-A85P4-1GA3 – GaAs PIN Photodiode with Pre-Amplifier, TO-46, 770-860nm, 1.25Gbps
High speed 1.25Gbps GaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 770nm-860nm, 3.3V, 4-pin
Details
PDT-A85P4-1MA4 – GaAs PIN Photodiode with Preamplifier, TO-46, 850nm, 125MHz
High speed 100/155Mbps GaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 3.3V to 5.0V
Details
PDT-A85P4-2GA3 – GaAs PIN Photodiode with Pre-Amplifier, TO-46, 770-860nm, 2.5Gbps
High speed 2.5Gbps GaAs Photodiode with Transimpedance Amplifier, 200ps Rise Time, 770nm-860nm, 3.3V
Details
PDT-A85P5-10GA3 – GaAs PIN Photodiode with Preamplifier, TO-46, 770-860nm, 10Gb/s
High speed 10Gb/s GaAs Photodiode with Transimpedance Amplifier, 50ps Rise Time, 770nm-860nm, 3.3V
Details
PDT-A85P5-10GB3 – GaAs PIN Photodiode with Preamplifier, TO-46, 770-860nm, 10Gb/s
High speed 10Gb/s GaAs Photodiode with Transimpedance Amplifier, 50ps Rise Time, 770nm-860nm, 3.3V
Details
PDT-A85P5-1GA3 – GaAs PIN Photodiode with Pre-Amplifier, TO-46, 770-860nm, 1.25Gbps
High speed 1.25Gbps GaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 770nm-860nm, 3.3V, 5-pin
Details
PDT-A85P5-4GA3 – GaAs PIN Photodiode with Preamplifier, TO-46, 770-860nm, 4.25Gbps
High speed 4.25Gbps GaAs Photodiode with Transimpedance Amplifier, 135ps Rise Time, 770nm-860nm, 3.3V
Details
PDT-B411A1200-SIL2 – Silicon PIN Photodiode, 400-1100nm, 1.2mm Active Area, TO-46
1064nm responsivity up to 0.27mA/mW
1.2mm Large active area
2-pin, TO-46 package with ball lens cap
High reliability, Low dark current
Details
PDT-B411A1200-SIL3 – Silicon PIN Photodiode, 400-1100nm, 1.2mm Active Area, TO-46
1064nm responsivity up to 0.27mA/mW
1.2mm Large active area
3-pin, TO-46 package with ball lens cap
High reliability, Low dark current
Details
PDT-B411A500-SI – Fast Silicon PIN Photodiode, 400-1100nm, 250ps Rise Time, 0.5×0.5mm Active Area, TO-46
Very fast rise time up to 250ps
High speed in TO-46 can package with ball lens cap
0.5x0.5mm diameter Active area
High reliability, ultra-low dark current
Details
PDT-B411A500-SIS – Fast Silicon PIN Photodiode, 400-1100nm, 250ps Rise Time, 0.5×0.5mm Active Area, TO-46
Very fast rise time up to 250ps
High speed in TO-46 can package with short ball lens cap
0.5x0.5mm diameter Active area
High reliability, ultra-low dark current
Details
PDT-B411ASI2G – Fast Silicon PIN Photodiode, 400-1100nm, ⌀200um Active Area, 2.5GHz, TO-46
Spectral range 400nm to 1100nm
High speed up to 2.5GHz
TO-46 package with ball lens cap
High reliability, Low capacitance
Details
PDT-F05A2500-SIA2 – Silicon PIN Photodiode, 400-1100nm, 2.5mm Active Area, TO-5
650nm responsivity up to 0.44mA/mW
2.5mm Large active area
2-pin, TO-5 can package
High reliability, low dark current
Details
PDT-F05A2500-SIA3 – Silicon PIN Photodiode, 400-1100nm, 2.5mm Active Area, TO-5
650nm responsivity up to 0.44mA/mW
2.5mm Large active area
3-pin, TO-5 can package
High reliability, low dark current
Details
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