Photodiode Detectors

  • High speed 2.5Gbps GaAs Photodiode with Transimpedance Amplifier, 200ps Rise Time, 770nm-860nm, 3.3V
  • High speed 4.25Gbps GaAs Photodiode with Transimpedance Amplifier, 135ps Rise Time, 770nm-860nm, 3.3V
  • High speed 10Gb/s GaAs Photodiode with Transimpedance Amplifier, 50ps Rise Time, 770nm-860nm, 3.3V
  • Lasermate offers high speed response GaAs PIN photodiode in TO-46 can with high responsivity at 850nm, low dark current and low capacitance.
  • High speed, high responsivity at 1310nm/1550nm, Analog InGaAs PIN photodiodes designed for analog optical links with bandwidth from DC to 2.5GHz.
  • The Lasermate PDA-A13A3-5G is an analog InGaAs photodetector with a semiconductor optimized for bandwidth from DC to 5GHz. It is perfect for high-speed applications and multi-channel CATV systems, offering reliable performance and precision.
  • High speed InGaAs photodiode chip in 1x4 array form with bandwidth >1.5GHz designed for use in fiber optic data communication applications.
  • High speed, low dark current, low capacitance, 75um InGaAs photodiode chip designed for long wavelength 2.5Gbps fiber optic application.
  • High-performance InGaAs photodiode die offering high responsivity, low capacitance and low dark current. Ideal for high speed 10Gb/s applications.
  • High quality large-area InGaAs PIN photodiode chip with aperture of 300um, low capacitance and low dark current, high responsivity at 1310nm and 1550nm.
  • High quality large-area InGaAs PIN photodiode chip with aperture of 1.0mm, low capacitance and low dark current, high responsivity at 1310nm and 1550nm.
  • Large-area InGaAs PIN photodiode chip with aperture of 1.5mm that exhibits low capacitance, low dark current, and high responsivity at 1310nm and 1550nm.
  • Large-area InGaAs PIN photodiode chip with aperture of 3.0mm, low capacitance and low dark current, high responsivity at 1310nm and 1550nm.
  • High speed 6.25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 85ps Rise Time, 1260-1620nm, 3.3V
  • High speed, low dark current and low capacitance, InGaAs PIN Photodiode, 1300nm, Dia. 120um Active Area
  • Highly reliable, high responsivity, 0.9um-1.7um, InGaAs quadrant PIN photodiode chip. Ideal for LIDAR, beam alignment, light spot position detection, and remote optical control applications.
  • High responsivity at 850nm, GaAs photodiode, LC ROSA with 1.5GHz bandwidth. The photodiode is designed for use in fiber optic data communication applications.
  • Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
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