- High responsivity from 1260nm to 1620nm
- High speed response in a TO-46 can with ball lens
- Low power supply voltage 3.3V
- Wide operation temperature range
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- High responsivity from 1260nm to 1620nm
- High speed response in a TO-46 can with ball lens
- Low power supply voltage 3.3V
- Gigabit-Capable Passive Optical Networks (GPON) application
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High speed 100/155Mbps GaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 3.3V to 5.0V -
High speed 1.25Gbps GaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 770nm-860nm, 3.3V, 4-pin -
High speed 2.5Gbps GaAs Photodiode with Transimpedance Amplifier, 200ps Rise Time, 770nm-860nm, 3.3V -
High speed 4.25Gbps GaAs Photodiode with Transimpedance Amplifier, 135ps Rise Time, 770nm-860nm, 3.3V -
High speed 10Gb/s GaAs Photodiode with Transimpedance Amplifier, 50ps Rise Time, 770nm-860nm, 3.3V -
Lasermate offers high speed response GaAs PIN photodiode in TO-46 can with high responsivity at 850nm, low dark current and low capacitance. -
High speed, high responsivity at 1310nm/1550nm, Analog InGaAs PIN photodiodes designed for analog optical links with bandwidth from DC to 2.5GHz. -
Lasermate offers high speed, high responsivity at 1310nm/1550nm, Analog InGaAs PIN photodiodes with bandwidth from DC to 5GHz. -
- High responsivity from 0.95um to 1.65um
- High speed response in a TO-46 can with flat window
- High reliability, low leakage current and noise
- ≥700MHz 3dB bandwidth
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Large area and high responsivity InGaAs PIN photodiode in TO-46 package at 800nm-1700nm wavelength spectral range with active area of 1.0mm diameter. Ideal for optical sensor and optical power meter, industrial automatic control, science analysis and experiment, space light detect equipment, response spectrum testing. -
High speed InGaAs photodiode chip in 1x4 array form with bandwidth >1.5GHz designed for use in fiber optic data communication applications. -
High speed, low dark current, low capacitance, 75um InGaAs photodiode chip designed for long wavelength 2.5Gbps fiber optic application. -
High-performance InGaAs photodiode die offering high responsivity, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
High quality large-area InGaAs PIN photodiode chip with aperture of 300um, low capacitance and low dark current, high responsivity at 1310nm and 1550nm. -
High quality large-area InGaAs PIN photodiode chip with aperture of 1.0mm, low capacitance and low dark current, high responsivity at 1310nm and 1550nm. -
Large-area InGaAs PIN photodiode chip with aperture of 1.5mm that exhibits low capacitance, low dark current, and high responsivity at 1310nm and 1550nm.
