Photodiode Detectors

  • InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 455um diameter active area.
  • Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 3mm diameter active area.
  • High speed GaAs photodiode with preamplifier in LC receptacle with flexible circuit designed for 25Gb/s data rate operation.
  • High speed, high responsivity, InGaAs photodiode with preamplifier in LC receptacle with flexible circuit designed for 25Gb/s data rate operation.
  • High speed 25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 21ps Rise Time, 1260-1360nm, 3.3V
  • The PDC-85A14G is a high-performance, low dark current, low capacitance GaAs PIN photodiode chip capable of speeds up to 14Gb/s. Perfect for optical data communication applications, it offers exceptional efficiency and reliability in demanding environments.
  • The PDC-85A25G is a high-speed GaAs PIN photodiode chip with a 25Gb/s data rate and excellent responsivity at 850nm. Optimized for fiber optic data communication, it delivers reliable performance in high-speed optical transmission systems.
  • The PDA12-85A2G is a low dark current and low capacitance 1x12 GaAs PIN photodiode chip array supporting speeds of 2.5/3.125Gbps. Perfect for telecom and data communication systems, it delivers reliable performance in high-speed multi-channel optical transmission.
  • High-performance InGaAs photodiode die in non-hermetic application offering high responsivity, low capacitance and low dark current. Ideal for high speed 10Gb/s applications.
  • High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications.
  • High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications.
  • High speed 1.25Gbps GaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 770nm-860nm, 3.3V, 5-pin
  • Lasermate offers high speed, high responsivity Analog InGaAs PIN photodiodes designed for analog optical links with bandwidth up to 2.5GHz.
  • High speed 11.3Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with short cap lens, 50ps Rise Time, 1260-1620nm, 3.3V
  • High speed 4.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 150ps (max) Rise Time, 1260-1620nm, 3.3V
  • High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V
  • High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1310nm, 3.3V to 5.0V
  • InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 455um diameter active area.
  • Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area.
  • Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area.
  • InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 950um diameter active area.
  • Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 1850um diameter active area.
  • Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
  • Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
  • Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
  • Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um.
  • Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um.
  • Large area InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area.
  • InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area.
  • Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area.
  • Large area InGaAs PIN photodiode in TO-39 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area.
  • High speed, high sensitivity, 1.25Gbps, 770-860nm, fiber-coupled GaAs amplified photodiode receiver module integrated with transimpedance amplifier (TIA) in single mode fiber pigtailed coaxial package with optional FC/ST/SC connector.
  • Hermetically sealed high speed pigtailed photodiodes designed for optical communications applications. The devices are available in FC, SC or ST connector types and is capable of reaching up to 2.5Gbps data rate operation.
  • High speed, high reliability GaAs PIN photodiode without TIA, LC receptacle with 5GHz bandwidth. The photodiode is designed for use in 4.25Gb/s fiber optic data communication applications.
  • High speed, high responsivity, GaAs photodiode with preamplifier in LC receptacle with flexible circuit designed for 25Gb/s data rate operation.
  • High speed, 1.25Gbps, 1100-1630nm wavelength range, fiber-coupled InGaAs PIN photodiode receiver module integrated with transimpedance amplifier (TIA) in FC or ST connector style receptacle packages.
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