Lasermate Group presents an extensive range of detectors and arrays utilizing indium gallium arsenide (InGaAs). Our offerings include large active area photodiodes and segmented InGaAs photodiode and arrays. For high-performance applications, we provide general InGaAs PIN photodiodes, Analog InGaAs PIN detectors, and InGaAs avalanche photodiodes (APDs). Additionally, our InGaAs detector assemblies consist of photodiode-amplifier hybrids, and pigtail and receptacle assemblies.
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Large area and high responsivity InGaAs PIN photodiode in TO-46 package with AR coating at 800nm-1700nm wavelength spectral range with active area of 1.0mm diameter. Ideal for optical sensor and optical power meter, industrial automatic control, science analysis and experiment, space light detect equipment, response spectrum testing. -
Large area and high responsivity InGaAs PIN photodiode in TO-46 package at 800nm-1700nm wavelength spectral range with active area of 1.0mm diameter. Ideal for optical sensor and optical power meter, industrial automatic control, science analysis and experiment, space light detect equipment, response spectrum testing.
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Large area and high responsivity InGaAs PIN photodiode in TO-46 package with large flat window cap at 800nm-1700nm wavelength spectral range with active area of 1.0mm diameter. Ideal for optical sensor and optical power meter, industrial automatic control, science analysis and experiment, space light detect equipment, response spectrum testing. -
Large area and high responsivity InGaAs PIN photodiode in TO-5 package at 800nm-1700nm wavelength spectral range with active area of 3.0mm diameter. Ideal for optical sensor and optical power meter, industrial automatic control, science analysis and experiment, space light detect equipment, response spectrum testing. -
Large area and high responsivity InGaAs PIN photodiode in TO-5 package at 800nm-1700nm wavelength spectral range with active area of 3.0mm diameter. Ideal for optical sensor and optical power meter, industrial automatic control, science analysis and experiment, space light detect equipment, response spectrum testing. -
Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area. -
Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area.
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Large area InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 455um diameter active area. -
Large area InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 455um diameter active area.
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Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 3mm diameter active area.
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Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large area InGaAs PIN photodiode in TO-39 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area.
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High speed 6.25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 85ps Rise Time, 1260-1620nm, 3.3V -
High speed 4.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 150ps (max) Rise Time, 1260-1620nm, 3.3V -
High speed 4.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 115ps Rise Time, 1260-1620nm, 3.3V
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High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V -
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
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High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V -
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
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High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V -
High speed 25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 21ps Rise Time, 1260-1360nm, 3.3V -
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V -
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V -
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V
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High speed 11.3Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with short cap lens, 50ps Rise Time, 1260-1620nm, 3.3V -
High speed 10Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with long cap lens, 50ps Rise Time, 1260-1620nm, 3.3V
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High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V -
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
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High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V -
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V -
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V -
High speed 1.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 1260-1620nm, 3.3V -
High speed 1.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 1260-1620nm, 3.3V -
High speed 1.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 1260-1620nm, 3.3V -
High speed 1.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 1260-1620nm, 3.3V -
High speed, low dark current and low capacitance, InGaAs PIN Photodiode, 1300nm, Dia. 120um Active Area -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 1850um diameter active area. -
Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 950um diameter active area.
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Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area.
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Lasermate offers high speed, high responsivity Analog InGaAs PIN photodiodes designed for analog optical links with bandwidth up to 2.5GHz. -
Lasermate offers high speed, high responsivity Analog InGaAs PIN photodiodes designed for analog optical links with bandwidth up to 2.5GHz.
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High speed, high responsivity at 1310nm/1550nm, Analog InGaAs PIN photodiodes designed for analog optical links with bandwidth from DC to 2.5GHz. -
Lasermate offers high speed, high responsivity Analog InGaAs PIN photodiodes designed for analog optical links with bandwidth up to 2.5GHz.
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Lasermate offers high speed, high responsivity at 1310nm/1550nm, Analog InGaAs PIN photodiodes with bandwidth from DC to 5GHz. -
High speed, high responsivity at 1310nm/1550nm, Analog InGaAs PIN photodiodes designed for analog optical links with bandwidth from DC to 2.5GHz.
