High-Performance Gallium Arsenide Photodiode Chips for Efficient Light Detection
GaAs (Gallium Arsenide) Photodiode Chips and Arrays offer superior performance in light detection applications. Known for their high speed, sensitivity, and ability to operate at longer wavelengths compared to silicon photodiodes, GaAs photodiodes are ideal for applications such as optical communication, medical instrumentation, and environmental sensing. Available in various configurations, these photodiodes provide high efficiency and low noise, ensuring accurate and reliable light detection in a range of environments.
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Lasermate provides 2.5/3.125Gbps, low dark current and low capacitance, GaAs photodiode in chip array form with 12 channels. -
Lasermate offers low dark current, low capacitance GaAs photodiode chip array designed for use in high speed 14Gbps fiber optic data communication applications. -
Lasermate offers low dark current, low capacitance GaAs photodiode chip array designed for use in high speed 25Gbps fiber optic data communication applications. -
Lasermate provides 2.5/3.125Gbps, low dark current and low capacitance, GaAs photodiode in chip array form with 4 channels. -
Lasermate offers low dark current, low capacitance GaAs photodiode chip designed for use in high speed 14Gbps data rate fiber optic data communication applications. -
Lasermate offers GaAs photodiode chip with high responsivity at 850nm for use in 1.25Gbps fiber optic data communication applications. -
Lasermate offers low dark current, low capacitance GaAs photodiode chip die designed for use in high speed 25Gbps fiber optic data communication applications. -
Lasermate offers GaAs photodiode chip with high responsivity at 850nm, low dark current and low capacitance, and designed for use in 2.5Gbps fiber optic data communication applications. -
Lasermate offers GaAs photodiode chip with high responsivity at 850nm, low dark current and low capacitance and for use in 4.25Gbps fiber optic data communication applications. -
Lasermate provides high responsivity at 850nm, low dark current and low capacitance, planarized and non-hermetic design GaAs photodiode chip for use in 10Gb/s fiber optic data communication applications.
