Precision Photodiodes for Accurate Light Detection in Various Applications
The Photodiodes category offers a wide range of high-sensitivity, fast-response light detection devices, suitable for a variety of applications. These photodiodes are designed to detect light across different wavelengths, from ultraviolet to infrared, providing accurate and reliable performance. Ideal for use in optical communication, medical imaging, environmental monitoring, and industrial automation, our photodiodes are optimized for low noise, high-speed response, and consistent accuracy. Whether you need PIN photodiodes, avalanche photodiodes, or silicon photodiodes, our products deliver precision light detection for both consumer and industrial applications.
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Fiber-coupled, low dark current, low capacitance, 1100-1630nm, InGaAs PIN photodiode receiver module with FC or ST receptacle style housing. Capable of reaching up to 1.25Gbps data rate operation. -
High-quality analog photodetector in FC receptacle package designed for >5GHz CATV receiver applications. Optically aligned to optimize performance and balance the parameters of responsivity, distortion, and back reflection. -
High speed, 1260-1620nm, InGaAs PIN photodiode integrated with transimpedance amplifier (TIA) in LC receptacle ROSA package with flexible circuit attached, suitable for use in 10Gbps data rate operation. -
High speed, high responsivity, InGaAs photodiode with preamplifier in LC receptacle with flexible circuit designed for 25Gb/s data rate operation. -
High sensitivity and high speed, 1100-1630nm, InGaAs PIN photodiode receiver module integrated with transimpedance amplifier (TIA), reaching up to 622Mbps data rate operation. Available in connector style receptacle packages (FC or ST).
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High sensitivity and high speed, 1100-1630nm wavelength range, fiber-coupled InGaAs PIN photodiode receiver module integrated with transimpedance amplifier in connector style receptacle packages (FC or ST), reaching up to 155Mbps data rate operation.
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High sensitivity and high speed, 1100-1630nm wavelength range, InGaAs PIN photodiode receiver module integrated with transimpedance amplifier in fiber pigtailed coaxial packages with optional FC/ST/SC connector, capable of reaching up to 2.5Gbps data rate operation. -
High speed, 1.25Gbps, 1100-1630nm wavelength range, fiber-coupled InGaAs PIN photodiode receiver module integrated with transimpedance amplifier (TIA) in FC or ST connector style receptacle packages.
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High speed, high responsivity, GaAs photodiode with preamplifier in LC receptacle with flexible circuit designed for 25Gb/s data rate operation. -
High speed, high reliability GaAs PIN photodiode without TIA, LC receptacle with 5GHz bandwidth. The photodiode is designed for use in 4.25Gb/s fiber optic data communication applications. -
Hermetically sealed high speed pigtailed photodiodes designed for optical communications applications. The devices are available in FC, SC or ST connector types and is capable of reaching up to 2.5Gbps data rate operation.
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High speed, high sensitivity, 1.25Gbps, 770-860nm, fiber-coupled GaAs amplified photodiode receiver module integrated with transimpedance amplifier (TIA) in single mode fiber pigtailed coaxial package with optional FC/ST/SC connector.
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Large area and high responsivity InGaAs PIN photodiode in TO-5 package at 800nm-1700nm wavelength spectral range with active area of 3.0mm diameter. Ideal for optical sensor and optical power meter, industrial automatic control, science analysis and experiment, space light detect equipment, response spectrum testing. -
Large area and high responsivity InGaAs PIN photodiode in TO-5 package at 800nm-1700nm wavelength spectral range with active area of 3.0mm diameter. Ideal for optical sensor and optical power meter, industrial automatic control, science analysis and experiment, space light detect equipment, response spectrum testing. -
Large area and high responsivity InGaAs PIN photodiode in TO-46 package with large flat window cap at 800nm-1700nm wavelength spectral range with active area of 1.0mm diameter. Ideal for optical sensor and optical power meter, industrial automatic control, science analysis and experiment, space light detect equipment, response spectrum testing. -
Large area and high responsivity InGaAs PIN photodiode in TO-46 package with AR coating at 800nm-1700nm wavelength spectral range with active area of 1.0mm diameter. Ideal for optical sensor and optical power meter, industrial automatic control, science analysis and experiment, space light detect equipment, response spectrum testing. -
Large area InGaAs PIN photodiode in TO-39 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area. -
Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area. -
Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area.
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Large area InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area. -
Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um. -
Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um.
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Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 950um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 455um diameter active area. -
High speed 1.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 1260-1620nm, 3.3V -
High speed 1.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 1260-1620nm, 3.3V -
High speed 1.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 1260-1620nm, 3.3V -
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V -
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V -
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V -
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V -
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V -
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
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High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V -
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V -
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
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High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V -
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
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High speed 4.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 150ps (max) Rise Time, 1260-1620nm, 3.3V -
High speed 11.3Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with short cap lens, 50ps Rise Time, 1260-1620nm, 3.3V -
Lasermate offers high speed, high responsivity Analog InGaAs PIN photodiodes designed for analog optical links with bandwidth up to 2.5GHz. -
Lasermate offers high speed, high responsivity Analog InGaAs PIN photodiodes designed for analog optical links with bandwidth up to 2.5GHz.
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Lasermate offers high speed, high responsivity Analog InGaAs PIN photodiodes designed for analog optical links with bandwidth up to 2.5GHz.
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High speed, high responsivity at 1310nm/1550nm, Analog InGaAs PIN photodiodes designed for analog optical links with bandwidth from DC to 2.5GHz. -
High speed 10Gb/s GaAs Photodiode with Transimpedance Amplifier, 50ps Rise Time, 770nm-860nm, 3.3V -
High speed 1.25Gbps GaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 770nm-860nm, 3.3V, 5-pin -
High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications.
