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Large area and high responsivity InGaAs PIN photodiode in TO-5 package at 800nm-1700nm wavelength spectral range with active area of 3.0mm diameter. Ideal for optical sensor and optical power meter, industrial automatic control, science analysis and experiment, space light detect equipment, response spectrum testing. -
Large area and high responsivity InGaAs PIN photodiode in TO-5 package at 800nm-1700nm wavelength spectral range with active area of 3.0mm diameter. Ideal for optical sensor and optical power meter, industrial automatic control, science analysis and experiment, space light detect equipment, response spectrum testing. -
Large area and high responsivity InGaAs PIN photodiode in TO-46 package with large flat window cap at 800nm-1700nm wavelength spectral range with active area of 1.0mm diameter. Ideal for optical sensor and optical power meter, industrial automatic control, science analysis and experiment, space light detect equipment, response spectrum testing. -
Large area and high responsivity InGaAs PIN photodiode in TO-46 package with AR coating at 800nm-1700nm wavelength spectral range with active area of 1.0mm diameter. Ideal for optical sensor and optical power meter, industrial automatic control, science analysis and experiment, space light detect equipment, response spectrum testing. -
Large area InGaAs PIN photodiode in TO-39 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area. -
Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area. -
Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area.
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Large area InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area. -
Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um. -
Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um.
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Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 950um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 455um diameter active area.
