- High responsivity from 400nm to 1100nm
- High Gain up to M=300, TO-46 Can Package
- High reliability, low dark current
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- High responsivity from 400nm to 1100nm
- High Gain up to M=400
- TO-46 Can Package, Ball lens
- High reliability, low dark current
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- High responsivity from 400nm to 1100nm
- High Gain up to M=400, TO-5 Can Package
- High reliability, low dark current
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- High responsivity from 0.95um to 1.65um
- High speed response in CLCC ceramic package
- High reliability, low leakage current and noise
- Large-area 200um active diameter
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 3mm diameter active area. -
Large area InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 455um diameter active area. -
Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
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Lasermate offers 640x512 pixel focal plane array (FPA) with 15um pixel pitch and embedded thermoelectric cooler that covers the short wavelength infrared (SWIR) region with selectable number of outputs (2, 4 or 8) and windowing capability which may be read out at up to 18MHz pixel rate. -
Lasermate provides 640x512 pixel focal plane array (FPA) with 15um pixel pitch and embedded thermoelectric cooler that covers the near infrared (NIR) region with selectable number of outputs (2, 4 or 8) and windowing capability which may be read out at up to 18MHz pixel rate. -
Lasermate offers 640x512 pixel focal plane array (FPA) with 15um pixel pitch covering the near infrared (NIR) region with selectable number of outputs (2, 4 or 8) and windowing capability which may be read out at up to 18MHz pixel rate. -
High responsivity at 850nm, GaAs photodiode, LC ROSA with 1.5GHz bandwidth. The photodiode is designed for use in fiber optic data communication applications. -
Highly reliable, high responsivity, 0.9um-1.7um, InGaAs quadrant PIN photodiode chip. Ideal for LIDAR, beam alignment, light spot position detection, and remote optical control applications. -
High speed, low dark current and low capacitance, InGaAs PIN Photodiode, 1300nm, Dia. 120um Active Area -
- Response wavelength 940nm
- High sensitivity, low dark current
- High speed response in 3030 package
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High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V -
High speed 4.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 115ps Rise Time, 1260-1620nm, 3.3V -
High speed 6.25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 85ps Rise Time, 1260-1620nm, 3.3V -
High speed 10Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with long cap lens, 50ps Rise Time, 1260-1620nm, 3.3V
