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36 Products
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54 Products
PDQC-13A1860 – InGaAs Quadrant PIN Photodiode Chip, 0.9um-1.7um
Highly reliable, high responsivity, 0.9um-1.7um, InGaAs quadrant PIN photodiode chip. Ideal for LIDAR, beam alignment, light spot position detection, and remote optical control applications.
Details
PDS-94A3030 – Silicon Photodiode, 940nm, 3030 Package
Response wavelength 940nm
High sensitivity, low dark current
High speed response in 3030 package
Details
PDT-A13A30 – InGaAs PIN Photodiode in TO-46 Package for 1300nm Emitter
High speed, low dark current and low capacitance, InGaAs PIN Photodiode, 1300nm, Dia. 120um Active Area
Details
PDT-A13P4-1GA3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 1.25Gbps
High speed 1.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P4-1GB3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 1.25Gbps
High speed 1.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P4-1GC3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 1.25Gbps
High speed 1.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P4-1GD3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 1.25Gbps
High speed 1.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P4-1MA4 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1310nm, 125MHz
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V
Details
PDT-A13P4-1MB4 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1310nm, 125MHz
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V
Details
PDT-A13P4-2GA3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 2.5Gbps
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P4-2GB3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 2.5Gbps
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P4-2GC3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 2.5Gbps
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P5-10GA3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 10Gb/s
High speed 10Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with long cap lens, 50ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P5-10GB3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 11.3-Gb/s
High speed 11.3Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with short cap lens, 50ps Rise Time, 1260-1620nm, 3.3V
Details
PDT-A13P5-1MA4 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 125MHz
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V
Details
PDT-A13P5-1MB4 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 125MHz
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V
Details
PDT-A13P5-1MC4 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1620nm, 125MHz
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V
Details
PDT-A13P5-25GA3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1360nm, 25Gb/s
High speed 25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 21ps Rise Time, 1260-1360nm, 3.3V
Details
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