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High speed 1.25Gbps GaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 770nm-860nm, 3.3V, 5-pin -
High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
High-performance InGaAs photodiode die in non-hermetic application offering high responsivity, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
The PDA12-85A2G is a low dark current and low capacitance 1x12 GaAs PIN photodiode chip array supporting speeds of 2.5/3.125Gbps. Perfect for telecom and data communication systems, it delivers reliable performance in high-speed multi-channel optical transmission. -
The PDC-85A25G is a high-speed GaAs PIN photodiode chip with a 25Gb/s data rate and excellent responsivity at 850nm. Optimized for fiber optic data communication, it delivers reliable performance in high-speed optical transmission systems. -
The PDC-85A14G is a high-performance, low dark current, low capacitance GaAs PIN photodiode chip capable of speeds up to 14Gb/s. Perfect for optical data communication applications, it offers exceptional efficiency and reliability in demanding environments. -
- High responsivity from 0.95um to 1.65um
- High speed response in a thermoelectric-cooled TO-46 with flat window
- High reliability, low leakage current and noise
- ≥800MHz 3dB bandwidth
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The Lasermate APD-A13P5-2GC3 is a high-speed 2.5Gbps InGaAs avalanche photodiode with an integrated transimpedance amplifier. Designed for Gigabit-Capable Passive Optical Networks (GPON) and long-wavelength fiber optic communication, it comes in a TO-46 package, supporting +3.3V operation for high-performance applications. -
High speed 25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 21ps Rise Time, 1260-1360nm, 3.3V -
High speed, high responsivity, InGaAs photodiode with preamplifier in LC receptacle with flexible circuit designed for 25Gb/s data rate operation. -
High speed GaAs photodiode with preamplifier in LC receptacle with flexible circuit designed for 25Gb/s data rate operation. -
- High responsivity from 0.95um to 1.65um
- High speed response in CLCC ceramic package
- High reliability, low leakage current and noise
- Large-area 200um active diameter
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 3mm diameter active area. -
InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 455um diameter active area. -
Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
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Lasermate offers 640x512 pixel focal plane array (FPA) with 15um pixel pitch and embedded thermoelectric cooler that covers the short wavelength infrared (SWIR) region with selectable number of outputs (2, 4 or 8) and windowing capability which may be read out at up to 18MHz pixel rate. -
Lasermate provides 640x512 pixel focal plane array (FPA) with 15um pixel pitch and embedded thermoelectric cooler that covers the near infrared (NIR) region with selectable number of outputs (2, 4 or 8) and windowing capability which may be read out at up to 18MHz pixel rate.
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Walnut, CA 91789
USA
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