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High speed 2.5Gbps GaAs Photodiode with Transimpedance Amplifier, 200ps Rise Time, 770nm-860nm, 3.3V -
High speed 4.25Gbps GaAs Photodiode with Transimpedance Amplifier, 135ps Rise Time, 770nm-860nm, 3.3V -
High speed 10Gb/s GaAs Photodiode with Transimpedance Amplifier, 50ps Rise Time, 770nm-860nm, 3.3V -
Lasermate offers high speed response GaAs PIN photodiode in TO-46 can with high responsivity at 850nm, low dark current and low capacitance. -
High speed, high responsivity at 1310nm/1550nm, Analog InGaAs PIN photodiodes designed for analog optical links with bandwidth from DC to 2.5GHz. -
The Lasermate PDA-A13A3-5G is an analog InGaAs photodetector with a semiconductor optimized for bandwidth from DC to 5GHz. It is perfect for high-speed applications and multi-channel CATV systems, offering reliable performance and precision. -
- High responsivity from 0.95um to 1.65um
- High speed response in a TO-46 can with flat window
- High reliability, low leakage current and noise
- ≥700MHz 3dB bandwidth
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The Lasermate APD-A13P5-1MC3 is a high-performance 155Mbps InGaAs avalanche photodiode with an integrated transimpedance amplifier. Ideal for fiber optic data communication, it offers high-speed response and a compact TO-46 package, optimized for long-wavelength applications with a single +3.3V power supply. -
The Lasermate APD-A13P5-10GC3 is a high-speed 10Gbps InGaAs avalanche photodiode with an integrated transimpedance amplifier. Designed for long-wavelength fiber optic communication (1260nm-1600nm), it comes in a TO-46 package and supports +3.3V operation, making it ideal for high-performance data communication applications. -
High speed InGaAs photodiode chip in 1x4 array form with bandwidth >1.5GHz designed for use in fiber optic data communication applications. -
High speed, low dark current, low capacitance, 75um InGaAs photodiode chip designed for long wavelength 2.5Gbps fiber optic application. -
High-performance InGaAs photodiode die offering high responsivity, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
High quality large-area InGaAs PIN photodiode chip with aperture of 300um, low capacitance and low dark current, high responsivity at 1310nm and 1550nm. -
High quality large-area InGaAs PIN photodiode chip with aperture of 1.0mm, low capacitance and low dark current, high responsivity at 1310nm and 1550nm. -
Large-area InGaAs PIN photodiode chip with aperture of 1.5mm that exhibits low capacitance, low dark current, and high responsivity at 1310nm and 1550nm. -
Large-area InGaAs PIN photodiode chip with aperture of 3.0mm, low capacitance and low dark current, high responsivity at 1310nm and 1550nm. -
High speed 6.25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 85ps Rise Time, 1260-1620nm, 3.3V -
High speed, low dark current and low capacitance, InGaAs PIN Photodiode, 1300nm, Dia. 120um Active Area
Lasermate Group, Inc.
19608 Camino De Rosa
Walnut, CA 91789
USA
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