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18 Products
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18 Products
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36 Products
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54 Products
APDE-F05A800-SIA-1 – Enhanced Si Avalanche Photodiode, 400-1100nm, 800um Active Area, TO-5
High responsivity from 400nm to 1100nm
High Gain up to M=400, TO-5 Can Package
High reliability, low dark current
Details
APDE-B46A500-SI-1 – Enhanced Si Avalanche Photodiode, 400-1100nm, 500um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=400
TO-46 Can Package, Ball lens
High reliability, low dark current
Details
APD-B90A230-1 – Si Avalanche Photodiode, 400-1100nm, ⌀230um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=300, TO-46 Can Package
High reliability, low dark current
Details
APD-B90A500-1 – Silicon Avalanche Photodiode, 400-1100nm, ⌀500um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=300, TO-46 Can Package
High reliability, low dark current
Details
APD-B90A800-1 – Silicon Avalanche Photodiode, 400-1100nm, ⌀800um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=300
TO-46 Can Package, Ball lens
High reliability, low dark current
Details
PDCE-411A6-SI – Silicon PIN Photodiode, 400-1100nm, 6mm Active Area, Ceramic Package
High responsivity from 400nm to 1100nm
6mm Large active area, Ceramic package
High reliability, low dark current
Details
PDCE-411A10-SI – Silicon PIN Photodiode, 400-1100nm, 10mm Active Area, Ceramic Package
High responsivity from 400nm to 1100nm
10mm Diameter Large active area, Ceramic package
High reliability, low dark current
Details
PDT-F05A2500-SIA2 – Silicon PIN Photodiode, 400-1100nm, 2.5mm Active Area, TO-5
650nm responsivity up to 0.44mA/mW
2.5mm Large active area
2-pin, TO-5 can package
High reliability, low dark current
Details
PDT-F05A3200-SIA – Silicon PIN Photodiode, 400-1100nm, 3.2mm Active Area, TO-5
1064nm responsivity up to 0.32mA/mW
3.2mm Large active area, TO-5 can package
High reliability, low dark current
Details
PDT-F05A4200-SIA – Silicon PIN Photodiode, 400-1100nm, 4.2mm Active Area, TO-5
980nm responsivity up to 0.67mA/mW
4.2mm Large active area, TO-5 can package
High reliability, low dark current
Details
PDT-F08A5900-SI – Silicon PIN Photodiode, 400-1100nm, 5.9mm Active Area, TO-8
405nm responsivity about 0.2mA/mW
5.9mm Ultra large active area, TO-8 can package
High reliability, low dark current
Details
PDT-F05UV3200-SI2 – UV Silicon PIN Photodiode, 200-1100nm, 3.2mm Active Area, TO-5
Spectral range 200nm to 1100nm
3.2mm Large active area
2-pin TO-5 can package
High reliability, low dark current
Details
PDT-F46UV1000-SI – UV Silicon PIN Photodiode, 200-1100nm, 1mm Active Area, TO-46
Spectral range 200nm to 1100nm
1mm Large active area, TO-46 can package
High reliability, low dark current
Details
PDT-SF46UV1200-SI2 – UV Silicon Photodiode, 200-1100nm, 1.2mm Active Area, TO-46
Spectral range 200nm to 1100nm
1.2mm Large active area
TO-46 with 2mm UV Flat window, 2-pin
High reliability, low dark current
Details
PDT-SF411A500-SI2 – Fast Silicon PIN Photodiode, 400-1100nm, 250ps Rise Time, 0.5mm Active Area, TO-46
Very fast rise time up to 250ps
High speed in 2-pin, TO-46 can package
0.5mm diameter Active area
High reliability, ultra-low dark current
Details
PDT-SF411A1200-SI2 – Silicon PIN Photodiode, 400-1100nm, 1.2mm Active Area, TO-46
1064nm responsivity up to 0.27mA/mW
1.2mm Large active area
2-pin, TO-46 package with 2mm flat window cap
High reliability, Low dark current
Details
PDT-SF411ASI2G – Fast Silicon PIN Photodiode, 400-1100nm, 200um Active Area, 2.5GHz, TO-46
Spectral range 400nm to 1100nm
High speed up to 2.5GHz
TO-46 package with 2mm flat window cap
High reliability, Low capacitance
Details
RLC-P85P8255-3V – 25Gb/s GaAs PIN-TIA Photodiode LC Receptacle with Flex
High speed GaAs photodiode with preamplifier in LC receptacle with flexible circuit designed for 25Gb/s data rate operation.
Details
RLC-M13P8255-3V – 25Gbps InGaAs PIN-TIA Photodiode LC Receptacle with Flex
High speed, high responsivity, InGaAs photodiode with preamplifier in LC receptacle with flexible circuit designed for 25Gb/s data rate operation.
Details
PDT-A13P5-25GA3 – InGaAs PIN Photodiode with Pre-Amplifier, TO-46, 1260-1360nm, 25Gb/s
High speed 25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 21ps Rise Time, 1260-1360nm, 3.3V
Details
APD-A13P5-1GB3 – InGaAs APD with Pre-Amplifier, 1260-1620nm, TO-46, 1.25Gbps
High responsivity from 1260nm to 1620nm
High speed response in a TO-46 can with ball lens
Low power supply voltage 3.3V
Details
APD-A13P5-2GB3 – InGaAs APD with Pre-Amplifier, 1260-1620nm, TO-46, 2.5Gbps
High responsivity from 1260nm to 1620nm
High speed response in a TO-46 can with ball lens
Low power supply voltage 3.3V
Details
APD-F13A5 – InGaAs Avalanche Photodiode, 950-1650nm, 200um Active Area, TO-46
High responsivity from 0.95um to 1.65um
High speed response in a thermoelectric-cooled TO-46 with flat window
High reliability, low leakage current and noise
≥800MHz 3dB bandwidth
Details
APD-B90A230-2 – Si Avalanche Photodiode, 400-1100nm, ⌀230um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=300, TO-46 Can Package
High reliability, low dark current
Details
APD-SF90A230-1 – Si Avalanche Photodiode, 400-1100nm, ⌀230um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=300, TO-46 Can Package
High reliability, low dark current
Details
APD-SF90A230-2 – Si Avalanche Photodiode, 400-1100nm, ⌀230um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=300, TO-46 Can Package
High reliability, low dark current
Details
APD-LF90A230-2 – Si Avalanche Photodiode, 400-1100nm, ⌀230um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=300, TO-46 Can Package
High reliability, low dark current
Details
APD-LF90A230-1 – Si Avalanche Photodiode, 400-1100nm, ⌀230um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=300, TO-46 Can Package
High reliability, low dark current
Details
APD-B90A500-2 – Silicon Avalanche Photodiode, 400-1100nm, ⌀500um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=300, TO-46 Can Package
High reliability, low dark current
Details
APD-SF90A500-2 – Silicon Avalanche Photodiode, 400-1100nm, ⌀500um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=300, TO-46 Can Package
High reliability, low dark current
Details
APD-SF90A500-1 – Silicon Avalanche Photodiode, 400-1100nm, ⌀500um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=300, TO-46 Can Package
High reliability, low dark current
Details
APD-LF90A500-2 – Silicon Avalanche Photodiode, 400-1100nm, ⌀500um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=300, TO-46 Can Package
High reliability, low dark current
Details
APD-LF90A500-1 – Silicon Avalanche Photodiode, 400-1100nm, ⌀500um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=300, TO-46 Can Package
High reliability, low dark current
Details
APD-B90A800-2 – Silicon Avalanche Photodiode, 400-1100nm, ⌀800um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=300, TO-46 Can Package
High reliability, low dark current
Details
APD-SF90A800-2 – Silicon Avalanche Photodiode, 400-1100nm, ⌀800um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=300, TO-46 Can Package
High reliability, low dark current
Details
APD-SF90A800-1 – Silicon Avalanche Photodiode, 400-1100nm, ⌀800um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=300, TO-46 Can Package
High reliability, low dark current
Details
APD-LF90A800-1 – Silicon Avalanche Photodiode, 400-1100nm, ⌀800um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=300, TO-46 Can Package
High reliability, low dark current
Details
APD-LF90A800-2 – Silicon Avalanche Photodiode, 400-1100nm, ⌀800um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=300, TO-46 Can Package
High reliability, low dark current
Details
APDE-F05A800-SIB-1 – Enhanced Si Avalanche Photodiode, 400-1100nm, ⌀800um Active Area, TO-5
High responsivity from 400nm to 1100nm
High Gain up to M=400, TO-5 Can Package
High reliability, low dark current
Details
APDE-F05A800-SIB-2 – Enhanced Si Avalanche Photodiode, 400-1100nm, ⌀800um Active Area, TO-5
High responsivity from 400nm to 1100nm
High Gain up to M=400, TO-5 Can Package
High reliability, low dark current
Details
APDE-F05A800-SIA-2 – Enhanced Si Avalanche Photodiode, 400-1100nm, ⌀800um Active Area, TO-5
High responsivity from 400nm to 1100nm
High Gain up to M=400, TO-5 Can Package
High reliability, low dark current
Details
APDE-B46A500-SI-2 – Enhanced Si Avalanche Photodiode, 400-1100nm, ⌀500um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=400
TO-46 Can Package, Ball Lens
High reliability, low dark current
Details
APDE-SF46A500-SI-2 – Enhanced Si Avalanche Photodiode, 400-1100nm, ⌀500um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=400
TO-46 Can Package, Flat window cap
High reliability, low dark current
Details
APDE-SF46A500-SI-1 – Enhanced Si Avalanche Photodiode, 400-1100nm, ⌀500um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=400
TO-46 Can Package, Flat window cap
High reliability, low dark current
Details
APDE-LF46A500-SI-1 – Enhanced Si Avalanche Photodiode, 400-1100nm, ⌀500um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=400
TO-46 Can Package, Large Flat window cap
High reliability, low dark current
Details
APDE-LF46A500-SI-2 – Enhanced Si Avalanche Photodiode, 400-1100nm, ⌀500um Active Area, TO-46
High responsivity from 400nm to 1100nm
High Gain up to M=400
TO-46 Can Package, Large Flat window cap
High reliability, low dark current
Details
PDT-F05A2500-SIA3 – Silicon PIN Photodiode, 400-1100nm, 2.5mm Active Area, TO-5
650nm responsivity up to 0.44mA/mW
2.5mm Large active area
3-pin, TO-5 can package
High reliability, low dark current
Details
PDT-F05A2500-SIB3 – Silicon PIN Photodiode, 400-1100nm, 2.5mm Active Area, TO-5
650nm responsivity up to 0.44mA/mW
2.5mm Large active area
3-pin, TO-5 can package
High reliability, low dark current
Details
PDT-F05A2500-SIB2 – Silicon PIN Photodiode, 400-1100nm, 2.5mm Active Area, TO-5
650nm responsivity up to 0.44mA/mW
2.5mm Large active area
2-pin, TO-5 can package
High reliability, low dark current
Details
PDT-F05A3200-SIB – Silicon PIN Photodiode, 400-1100nm, 3.2mm Active Area, TO-5
1064nm responsivity up to 0.32mA/mW
3.2mm Large active area, TO-5 can package
High reliability, low dark current
Details
PDT-F05A4200-SIB – Silicon PIN Photodiode, 400-1100nm, 4.2mm Active Area, TO-5
980nm responsivity up to 0.67mA/mW
4.2mm Large active area, TO-5 can package
High reliability, low dark current
Details
PDT-F05UV3200-SI3 – UV Silicon PIN Photodiode, 200-1100nm, 3.2×3.2mm Active Area, TO-5
Spectral range 200nm to 1100nm
3.2x3.2mm Large active area
3-pin TO-5 can package
High reliability, low dark current
Details
PDT-SF411A500-SI3 – Fast Silicon PIN Photodiode, 400-1100nm, 250ps Rise Time, 0.5×0.5mm Active Area, TO-46
Very fast rise time up to 250ps
High speed in 3-pin, TO-46 can package
0.5x0.5mm diameter Active area
High reliability, ultra-low dark current
Details
PDT-LF411A500-SI3 – Fast Silicon PIN Photodiode, 400-1100nm, 250ps Rise Time, 0.5×0.5mm Active Area, TO-46
Very fast rise time up to 250ps
High speed in 3-pin, TO-46 can package with large flat window cap
0.5x0.5mm diameter Active area
High reliability, ultra-low dark current
Details
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