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Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 1850um diameter active area.
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Highly reliable, high responsivity, 0.9um-1.7um, InGaAs quadrant PIN photodiode chip. Ideal for LIDAR, beam alignment, light spot position detection, and remote optical control applications. -
High speed, low dark current and low capacitance, InGaAs PIN Photodiode, 1300nm, Dia. 120um Active Area -
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1310nm, 3.3V to 5.0V -
The PDT-A13P4-2GF3 is a high-performance InGaAs PIN Photodiode with an integrated pre-amplifier, designed for applications requiring fast data transmission. With a wavelength range of 1260-1620nm and a data rate of up to 2.5Gbps, this 4-pin TO-46 package component is ideal for optical communication systems. -
High speed 11.3Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with short cap lens, 50ps Rise Time, 1260-1620nm, 3.3V -
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V -
High speed 25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 21ps Rise Time, 1260-1360nm, 3.3V -
The PDT-A13P5-2GF3 is a high-performance InGaAs PIN Photodiode with an integrated pre-amplifier, designed for applications requiring fast data transmission. With a wavelength range of 1260-1620nm and a data rate of up to 2.5Gbps, this 5-pin TO-46 package component is ideal for optical communication systems.
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High speed 4.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 150ps (max) Rise Time, 1260-1620nm, 3.3V -
High speed 6.25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 85ps Rise Time, 1260-1620nm, 3.3V -
Lasermate offers high speed response GaAs PIN photodiode in TO-46 can with high responsivity at 850nm, low dark current and low capacitance. -
High speed 100/155Mbps GaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 3.3V to 5.0V -
High speed 2.5Gbps GaAs Photodiode with Transimpedance Amplifier, 200ps Rise Time, 770nm-860nm, 3.3V -
High speed 10Gb/s GaAs Photodiode with Transimpedance Amplifier, 50ps Rise Time, 770nm-860nm, 3.3V -
High speed 1.25Gbps GaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 770nm-860nm, 3.3V, 5-pin -
High speed 4.25Gbps GaAs Photodiode with Transimpedance Amplifier, 135ps Rise Time, 770nm-860nm, 3.3V -
Large area InGaAs PIN photodiode in TO-39 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 3mm diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
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InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 455um diameter active area. -
InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 455um diameter active area.
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Large area InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area.
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Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area.
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Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um.
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High speed, 1260-1620nm, InGaAs PIN photodiode integrated with transimpedance amplifier (TIA) in LC receptacle ROSA package with flexible circuit attached, suitable for use in 10Gbps data rate operation. -
High sensitivity and high speed, 1100-1630nm wavelength range, fiber-coupled InGaAs PIN photodiode receiver module integrated with transimpedance amplifier in fiber coaxial pigtailed package, with fiber end either open or equipped with FC/ST/SC optical connector, reaching up to 155Mbps data rate operation. -
High sensitivity and high speed, 1100-1630nm wavelength range, fiber-coupled InGaAs PIN photodiode receiver module integrated with transimpedance amplifier in connector style receptacle packages (FC or ST), reaching up to 155Mbps data rate operation. -
High speed, 1.25Gbps, high sensitivity, 1100-1630nm, fiber-coupled InGaAs PIN photodiode receiver modules integrated with transimpedance amplifier fiber pigtailed with optional FC/ST/SC connector.
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High speed, 1.25Gbps, 1100-1630nm wavelength range, fiber-coupled InGaAs PIN photodiode receiver module integrated with transimpedance amplifier (TIA) in FC or ST connector style receptacle packages.
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Walnut, CA 91789
USA
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