High-Sensitivity Optical Detectors & Sensors for Accurate Light Measurement
The Optical Detectors and Sensors category provides a comprehensive selection of high-sensitivity devices designed for precise light detection and measurement. Our offerings include photodiodes and infrared sensors, optimized for various applications such as environmental monitoring, industrial automation, medical diagnostics, and optical communication. These detectors ensure accurate detection of light intensity, wavelength, and position, making them ideal for scientific research, safety systems, and process control. With fast response times and high accuracy, our optical sensors deliver reliable performance across a wide range of environments.
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The Lasermate APD-A13P6-25GA3 is a 25Gbps InGaAs avalanche photodiode with an integrated transimpedance amplifier, designed for high-performance fiber optic communication in the 1260nm-1600nm wavelength range. Housed in a TO-46 package with an aspherical lens, it supports data rates up to 25.78125Gbps and operates with a single +3.3V power supply. -
The PDT-A13P5-2GF3 is a high-performance InGaAs PIN Photodiode with an integrated pre-amplifier, designed for applications requiring fast data transmission. With a wavelength range of 1260-1620nm and a data rate of up to 2.5Gbps, this 5-pin TO-46 package component is ideal for optical communication systems. -
The PDT-A13P4-2GF3 is a high-performance InGaAs PIN Photodiode with an integrated pre-amplifier, designed for applications requiring fast data transmission. With a wavelength range of 1260-1620nm and a data rate of up to 2.5Gbps, this 4-pin TO-46 package component is ideal for optical communication systems.
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Fiber-coupled, low dark current, low capacitance, 1100-1630nm, InGaAs PIN photodiode receiver module with FC or ST receptacle style housing. Capable of reaching up to 1.25Gbps data rate operation. -
High-quality analog photodetector in FC receptacle package designed for >5GHz CATV receiver applications. Optically aligned to optimize performance and balance the parameters of responsivity, distortion, and back reflection. -
High speed, 1260-1620nm, InGaAs PIN photodiode integrated with transimpedance amplifier (TIA) in LC receptacle ROSA package with flexible circuit attached, suitable for use in 10Gbps data rate operation. -
High speed, high responsivity, InGaAs photodiode with preamplifier in LC receptacle with flexible circuit designed for 25Gb/s data rate operation. -
High sensitivity and high speed, 1100-1630nm, InGaAs PIN photodiode receiver module integrated with transimpedance amplifier (TIA), reaching up to 622Mbps data rate operation. Available in connector style receptacle packages (FC or ST).
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High sensitivity and high speed, 1100-1630nm wavelength range, fiber-coupled InGaAs PIN photodiode receiver module integrated with transimpedance amplifier in connector style receptacle packages (FC or ST), reaching up to 155Mbps data rate operation.
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High sensitivity and high speed, 1100-1630nm wavelength range, InGaAs PIN photodiode receiver module integrated with transimpedance amplifier in fiber pigtailed coaxial packages with optional FC/ST/SC connector, capable of reaching up to 2.5Gbps data rate operation. -
High speed, 1.25Gbps, 1100-1630nm wavelength range, fiber-coupled InGaAs PIN photodiode receiver module integrated with transimpedance amplifier (TIA) in FC or ST connector style receptacle packages.
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High speed, high responsivity, GaAs photodiode with preamplifier in LC receptacle with flexible circuit designed for 25Gb/s data rate operation. -
High speed, high reliability GaAs PIN photodiode without TIA, LC receptacle with 5GHz bandwidth. The photodiode is designed for use in 4.25Gb/s fiber optic data communication applications. -
Hermetically sealed high speed pigtailed photodiodes designed for optical communications applications. The devices are available in FC, SC or ST connector types and is capable of reaching up to 2.5Gbps data rate operation.
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High speed, high sensitivity, 1.25Gbps, 770-860nm, fiber-coupled GaAs amplified photodiode receiver module integrated with transimpedance amplifier (TIA) in single mode fiber pigtailed coaxial package with optional FC/ST/SC connector.
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Large area InGaAs PIN photodiode in TO-39 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area. -
Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area. -
InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area.
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Large area InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area. -
Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um. -
Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um.
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Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 1850um diameter active area.
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InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 950um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area.
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InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 455um diameter active area. -
Lasermate provides 640x512 pixel focal plane array (FPA) with 15um pixel pitch and embedded thermoelectric cooler that covers the near infrared (NIR) region with selectable number of outputs (2, 4 or 8) and windowing capability which may be read out at up to 18MHz pixel rate. -
Lasermate provides 640x512 pixel focal plane array (FPA) with 15um pixel pitch and embedded thermoelectric cooler that covers the near infrared (NIR) region with selectable number of outputs (2, 4 or 8) and windowing capability which may be read out at up to 18MHz pixel rate.
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High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1310nm, 3.3V to 5.0V -
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V -
High speed 4.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 150ps (max) Rise Time, 1260-1620nm, 3.3V -
High speed 11.3Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with short cap lens, 50ps Rise Time, 1260-1620nm, 3.3V -
Lasermate offers high speed, high responsivity Analog InGaAs PIN photodiodes designed for analog optical links with bandwidth up to 2.5GHz. -
High speed 1.25Gbps GaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 770nm-860nm, 3.3V, 5-pin -
High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
High-performance InGaAs photodiode die in non-hermetic application offering high responsivity, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
The PDA12-85A2G is a low dark current and low capacitance 1x12 GaAs PIN photodiode chip array supporting speeds of 2.5/3.125Gbps. Perfect for telecom and data communication systems, it delivers reliable performance in high-speed multi-channel optical transmission. -
The PDC-85A25G is a high-speed GaAs PIN photodiode chip with a 25Gb/s data rate and excellent responsivity at 850nm. Optimized for fiber optic data communication, it delivers reliable performance in high-speed optical transmission systems. -
The PDC-85A14G is a high-performance, low dark current, low capacitance GaAs PIN photodiode chip capable of speeds up to 14Gb/s. Perfect for optical data communication applications, it offers exceptional efficiency and reliability in demanding environments. -
- High responsivity from 0.95um to 1.65um
- High speed response in a thermoelectric-cooled TO-46 with flat window
- High reliability, low leakage current and noise
- ≥800MHz 3dB bandwidth
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The Lasermate APD-A13P5-2GC3 is a high-speed 2.5Gbps InGaAs avalanche photodiode with an integrated transimpedance amplifier. Designed for Gigabit-Capable Passive Optical Networks (GPON) and long-wavelength fiber optic communication, it comes in a TO-46 package, supporting +3.3V operation for high-performance applications. -
High speed 25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 21ps Rise Time, 1260-1360nm, 3.3V -
High speed, high responsivity, InGaAs photodiode with preamplifier in LC receptacle with flexible circuit designed for 25Gb/s data rate operation.
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High speed GaAs photodiode with preamplifier in LC receptacle with flexible circuit designed for 25Gb/s data rate operation.
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- High responsivity from 0.95um to 1.65um
- High speed response in CLCC ceramic package
- High reliability, low leakage current and noise
- Large-area 200um active diameter
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 3mm diameter active area.
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InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 455um diameter active area.
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Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
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Lasermate offers 640x512 pixel focal plane array (FPA) with 15um pixel pitch and embedded thermoelectric cooler that covers the short wavelength infrared (SWIR) region with selectable number of outputs (2, 4 or 8) and windowing capability which may be read out at up to 18MHz pixel rate. -
Lasermate provides 640x512 pixel focal plane array (FPA) with 15um pixel pitch and embedded thermoelectric cooler that covers the near infrared (NIR) region with selectable number of outputs (2, 4 or 8) and windowing capability which may be read out at up to 18MHz pixel rate.
