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High speed, 1.25Gbps, 1100-1630nm wavelength range, fiber-coupled InGaAs PIN photodiode receiver module integrated with transimpedance amplifier (TIA) in FC or ST connector style receptacle packages. -
High speed, high responsivity, GaAs photodiode with preamplifier in LC receptacle with flexible circuit designed for 25Gb/s data rate operation. -
High speed, high reliability GaAs PIN photodiode without TIA, LC receptacle with 5GHz bandwidth. The photodiode is designed for use in 4.25Gb/s fiber optic data communication applications. -
Hermetically sealed high speed pigtailed photodiodes designed for optical communications applications. The devices are available in FC, SC or ST connector types and is capable of reaching up to 2.5Gbps data rate operation. -
The R85-1G-PYZ-VP is a GaAs-based photodiode receiver module with integrated TIA, supporting 1.25Gbps data rates and optimized for 770–860nm. Offered in a pigtailed configuration with multimode fiber, this module ensures high sensitivity and flexible integration for optical communication systems.
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Large area InGaAs PIN photodiode in TO-39 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area. -
Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area. -
InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area.
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Large area InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area. -
Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um. -
Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um.
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Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 1850um diameter active area.
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InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 950um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area.
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InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 455um diameter active area. -
The TST-M85A426-2H-V2 is a high-performance 1.25Gbps 850nm VCSEL, providing more than 1mW output at 8mA and designed for ST receptacle compatibility. This component offers dependable data transmission for various optical networking needs. -
The TST-M85A426-2H is a high-efficiency 1.25Gbps 850nm VCSEL, delivering more than 1mW output at 6mA, and designed for ST receptacle compatibility. This component ensures reliable data transmission in various optical networking scenarios.
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The TSC-P85A4x6-2 is a 1.25Gbps 850nm VCSEL SC-TOSA, engineered for efficient data transmission. This reliable component is perfect for a range of optical communication applications, ensuring optimal performance. -
The TLC-P85A846-25M is a high-performance 25Gb/s LC connectorized 850nm VCSEL, featuring an FPC and designed for wide operating temperatures. This component provides exceptional data transmission reliability for demanding networking scenarios. -
The TLC-P85A646-10M is a cutting-edge 10Gb/s 850nm VCSEL LC-TOSA featuring an FPC and a wide operating temperature range. This high-speed component delivers exceptional data transmission reliability, making it perfect for advanced networking applications. -
The TLC-P85A546-10M is a cutting-edge 10Gb/s 850nm VCSEL LC-TOSA, engineered for reliable performance in diverse environments. Its wide operating temperature range ensures optimal functionality, making it perfect for data-intensive applications. -
The TLC-P85A4x6-4M is a 4.25Gbps 850nm VCSEL LC-TOSA featuring an integrated monitor photodiode (PD) and designed for wide operating temperatures. This high-performance component ensures dependable operation for various data communication applications. -
The TLC-P85A4x6-3 is a 2.5Gbps 850nm VCSEL LC-TOSA featuring an integrated monitor photodiode (PD). This device ensures high reliability and performance, making it ideal for various data communication needs. -
The TLC-P85A4x6-3M is a 2.5Gbps 850nm VCSEL LC-TOSA featuring an integrated monitor photodiode (PD) and designed for wide operating temperatures. This component ensures high performance and reliability in various data communication applications.
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High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1310nm, 3.3V to 5.0V -
1.25Gbps InGaAs PIN + AGC Pre-Amplifier Photodiode in TO-46 Package, Short Cap Lens, +3.3V Supply -
High speed 4.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 150ps (max) Rise Time, 1260-1620nm, 3.3V -
High speed 11.3Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with short cap lens, 50ps Rise Time, 1260-1620nm, 3.3V -
Lasermate offers high speed, high responsivity Analog InGaAs PIN photodiodes designed for analog optical links with bandwidth up to 2.5GHz. -
High speed 1.25Gbps GaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 770nm-860nm, 3.3V, 5-pin -
High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications.
Lasermate Group, Inc.
19608 Camino De Rosa
Walnut, CA 91789
USA
Contact Us
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