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The TST-M85A426-2H is a high-efficiency 1.25Gbps 850nm VCSEL, delivering more than 1mW output at 6mA, and designed for ST receptacle compatibility. This component ensures reliable data transmission in various optical networking scenarios. -
The TST-M85A426-2H-V2 is a high-performance 1.25Gbps 850nm VCSEL, providing more than 1mW output at 8mA and designed for ST receptacle compatibility. This component offers dependable data transmission for various optical networking needs.
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InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 455um diameter active area. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area.
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InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 950um diameter active area. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
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Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um. -
Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um.
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Large area InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area.
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InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area.
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Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area.
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Large area InGaAs PIN photodiode in TO-39 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area.
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The R85-1G-PYZ-VP is a GaAs-based photodiode receiver module with integrated TIA, supporting 1.25Gbps data rates and optimized for 770–860nm. Offered in a pigtailed configuration with multimode fiber, this module ensures high sensitivity and flexible integration for optical communication systems. -
Hermetically sealed high speed pigtailed photodiodes designed for optical communications applications. The devices are available in FC, SC or ST connector types and is capable of reaching up to 2.5Gbps data rate operation.
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USA
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