- 405nm responsivity about 0.2mA/mW
- 5.9mm Ultra large active area, TO-8 can package
- High reliability, low dark current
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- 980nm responsivity up to 0.67mA/mW
- 4.2mm Large active area, TO-5 can package
- High reliability, low dark current
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- 1064nm responsivity up to 0.32mA/mW
- 3.2mm Large active area, TO-5 can package
- High reliability, low dark current
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- High responsivity from 400nm to 1100nm
- 10mm Diameter Large active area, Ceramic package
- High reliability, low dark current
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The APD-CS916200 is a planar InGaAs avalanche photodiode in a 6CLCC ceramic package, designed for 0.95–1.65µm detection. With high responsivity, low noise, and ≥700MHz bandwidth, it is ideal for LIDAR, optical communication, and infrared sensing. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 3mm diameter active area. -
InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 455um diameter active area. -
Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
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The FPA15M640SC is a 640x512 short-wave infrared (SWIR) focal plane array covering the 1.2–2.2µm spectral range. Featuring an embedded thermoelectric cooler (TEC), high quantum efficiency (>70%), and >98% pixel operability, it ensures reliable, high-resolution performance for SWIR imaging, inspection, and scientific applications.
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The FPA15M640NA is a 640x512 InGaAs focal plane array with a 0.9–1.7µm spectral response and an embedded thermoelectric cooler (TEC) for enhanced stability. Designed for demanding NIR imaging, inspection, and telecom applications, it delivers >70% quantum efficiency and high pixel reliability.
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The FPA15C640A is a near-infrared InGaAs focal plane array with a 640x512 resolution and 0.6–1.7µm spectral response. Offering >70% quantum efficiency, high pixel operability, and versatile readout modes, it is designed for imaging, inspection, and scientific applications. -
850nm RCLED chip with 128µm emitting diameter, optimized for data link communication, industrial systems, and sensors. Delivers enhanced coupling efficiency and consistent optical output. -
High-efficiency 650nm RCLED chip supporting 155Mb/s data rates, optimized for plastic optical fiber (POF) data communication, home networking, and optical sensing applications. -
650nm RCLED chip with 50µm emitting diameter, optimized for industrial and sensor applications. Delivers low current bias, high optical efficiency, and stable long-term performance. -
650nm RCLED chip with 30µm emitting diameter, designed for sensors and industrial use. Offers low current bias, stable optical output, and long-term reliability. -
Compact 650nm RCLED chip with 25µm emitting diameter, delivering high brightness, narrow emission spectrum, and stable performance for sensing and industrial applications. -
CWDM Distributed Feedback Laser Diodes for Telecom and Datacom, 1270nm-1610nm, TO-can, 2.5Gbit/s This part is obsolete and is superseded by part number CxxD-5A-C2G-V2. -
High responsivity at 850nm, GaAs photodiode, LC ROSA with 1.5GHz bandwidth. The photodiode is designed for use in fiber optic data communication applications.
