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650nm RCLED chip with 30µm emitting diameter, designed for sensors and industrial use. Offers low current bias, stable optical output, and long-term reliability. -
650nm RCLED chip with 50µm emitting diameter, optimized for industrial and sensor applications. Delivers low current bias, high optical efficiency, and stable long-term performance. -
High-efficiency 650nm RCLED chip supporting 155Mb/s data rates, optimized for plastic optical fiber (POF) data communication, home networking, and optical sensing applications. -
850nm RCLED chip with 128µm emitting diameter, optimized for data link communication, industrial systems, and sensors. Delivers enhanced coupling efficiency and consistent optical output. -
The FPA15C640A is a near-infrared InGaAs focal plane array with a 640x512 resolution and 0.6–1.7µm spectral response. Offering >70% quantum efficiency, high pixel operability, and versatile readout modes, it is designed for imaging, inspection, and scientific applications. -
The FPA15M640NA is a 640x512 InGaAs focal plane array with a 0.9–1.7µm spectral response and an embedded thermoelectric cooler (TEC) for enhanced stability. Designed for demanding NIR imaging, inspection, and telecom applications, it delivers >70% quantum efficiency and high pixel reliability. -
The FPA15M640SC is a 640x512 short-wave infrared (SWIR) focal plane array covering the 1.2–2.2µm spectral range. Featuring an embedded thermoelectric cooler (TEC), high quantum efficiency (>70%), and >98% pixel operability, it ensures reliable, high-resolution performance for SWIR imaging, inspection, and scientific applications.
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Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um. -
InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 455um diameter active area. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 3mm diameter active area.
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The APD-CS916200 is a planar InGaAs avalanche photodiode in a 6CLCC ceramic package, designed for 0.95–1.65µm detection. With high responsivity, low noise, and ≥700MHz bandwidth, it is ideal for LIDAR, optical communication, and infrared sensing. -
- High responsivity from 400nm to 1100nm
- 10mm Diameter Large active area, Ceramic package
- High reliability, low dark current
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- 1064nm responsivity up to 0.32mA/mW
- 3.2mm Large active area, TO-5 can package
- High reliability, low dark current
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- 980nm responsivity up to 0.67mA/mW
- 4.2mm Large active area, TO-5 can package
- High reliability, low dark current
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- 405nm responsivity about 0.2mA/mW
- 5.9mm Ultra large active area, TO-8 can package
- High reliability, low dark current
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- Spectral range 200nm to 1100nm
- 1mm Large active area, TO-46 can package
- High reliability, low dark current
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- Spectral range 400nm to 1100nm
- High speed up to 2.5GHz
- TO-46 package with 2mm flat window cap
- High reliability, Low capacitance
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High stability, high power CW violet and red diode lasers up to 20000 mW
Applications: Measurement, Spectrum analysis, Communication, Laser lighting show
Lasermate Group, Inc.
19608 Camino De Rosa
Walnut, CA 91789
USA
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