- Spectral range 400nm to 1100nm
- High speed up to 2.5GHz
- TO-46 package with ball lens cap
- High reliability, Low capacitance
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- Spectral range 200nm to 1100nm
- 1.2x1.2mm Large active area
- TO-46 with 2mm UV Flat window, 3-pin
- High reliability, low dark current
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The PDC-85A14G is a high-performance, low dark current, low capacitance GaAs PIN photodiode chip capable of speeds up to 14Gb/s. Perfect for optical data communication applications, it offers exceptional efficiency and reliability in demanding environments. -
The PDC-85A25G is a high-speed GaAs PIN photodiode chip with a 25Gb/s data rate and excellent responsivity at 850nm. Optimized for fiber optic data communication, it delivers reliable performance in high-speed optical transmission systems. -
The PDA12-85A2G is a low dark current and low capacitance 1x12 GaAs PIN photodiode chip array supporting speeds of 2.5/3.125Gbps. Perfect for telecom and data communication systems, it delivers reliable performance in high-speed multi-channel optical transmission. -
808nm Laser Diode, 500mW output, ⌀5.6mm, 70°C max temperature. Ideal for industrial, medical, and research applications. -
High-performance InGaAs photodiode die in non-hermetic application offering high responsivity, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
High speed 1.25Gbps GaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 770nm-860nm, 3.3V, 5-pin -
Lasermate offers high speed, high responsivity Analog InGaAs PIN photodiodes designed for analog optical links with bandwidth up to 2.5GHz. -
High speed 11.3Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with short cap lens, 50ps Rise Time, 1260-1620nm, 3.3V -
High speed 4.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 150ps (max) Rise Time, 1260-1620nm, 3.3V -
1.25Gbps InGaAs PIN + AGC Pre-Amplifier Photodiode in TO-46 Package, Short Cap Lens, +3.3V Supply -
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1310nm, 3.3V to 5.0V -
The TLC-P85A4x6-3M is a 2.5Gbps 850nm VCSEL LC-TOSA featuring an integrated monitor photodiode (PD) and designed for wide operating temperatures. This component ensures high performance and reliability in various data communication applications. -
The TLC-P85A4x6-3 is a 2.5Gbps 850nm VCSEL LC-TOSA featuring an integrated monitor photodiode (PD). This device ensures high reliability and performance, making it ideal for various data communication needs.
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The TLC-P85A4x6-4M is a 4.25Gbps 850nm VCSEL LC-TOSA featuring an integrated monitor photodiode (PD) and designed for wide operating temperatures. This high-performance component ensures dependable operation for various data communication applications. -
The TLC-P85A546-10M is a cutting-edge 10Gb/s 850nm VCSEL LC-TOSA, engineered for reliable performance in diverse environments. Its wide operating temperature range ensures optimal functionality, making it perfect for data-intensive applications. -
The TLC-P85A646-10M is a cutting-edge 10Gb/s 850nm VCSEL LC-TOSA featuring an FPC and a wide operating temperature range. This high-speed component delivers exceptional data transmission reliability, making it perfect for advanced networking applications. -
The TLC-P85A846-25M is a high-performance 25Gb/s LC connectorized 850nm VCSEL, featuring an FPC and designed for wide operating temperatures. This component provides exceptional data transmission reliability for demanding networking scenarios. -
The TSC-P85A4x6-2 is a 1.25Gbps 850nm VCSEL SC-TOSA, engineered for efficient data transmission. This reliable component is perfect for a range of optical communication applications, ensuring optimal performance. -
The TST-M85A426-2H is a high-efficiency 1.25Gbps 850nm VCSEL, delivering more than 1mW output at 6mA, and designed for ST receptacle compatibility. This component ensures reliable data transmission in various optical networking scenarios. -
The TST-M85A426-2H-V2 is a high-performance 1.25Gbps 850nm VCSEL, providing more than 1mW output at 8mA and designed for ST receptacle compatibility. This component offers dependable data transmission for various optical networking needs.
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InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 455um diameter active area. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area.
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InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 950um diameter active area. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um.
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Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um. -
Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um.
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Large area InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area.
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InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area.
