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Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large area InGaAs PIN photodiode in TO-39 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area.
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- 405nm responsivity about 0.2mA/mW
- 5.9mm Ultra large active area, TO-8 can package
- High reliability, low dark current
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- Spectral range 200nm to 1100nm
- 3.2x3.2mm Large active area
- 3-pin TO-5 can package
- High reliability, low dark current
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- 980nm responsivity up to 0.67mA/mW
- 4.2mm Large active area, TO-5 can package
- High reliability, low dark current
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- 1064nm responsivity up to 0.32mA/mW
- 3.2mm Large active area, TO-5 can package
- High reliability, low dark current
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- 650nm responsivity up to 0.44mA/mW
- 2.5mm Large active area
- 3-pin, TO-5 can package
- High reliability, low dark current
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- Spectral range 400nm to 1100nm
- High speed up to 2.5GHz
- TO-46 package with ball lens cap
- High reliability, Low capacitance
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- Very fast rise time up to 250ps
- High speed in TO-46 can package with ball lens cap
- 0.5x0.5mm diameter Active area
- High reliability, ultra-low dark current
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- 1064nm responsivity up to 0.27mA/mW
- 1.2mm Large active area
- 3-pin, TO-46 package with ball lens cap
- High reliability, Low dark current
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High speed 4.25Gbps GaAs Photodiode with Transimpedance Amplifier, 135ps Rise Time, 770nm-860nm, 3.3V -
High speed 1.25Gbps GaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 770nm-860nm, 3.3V, 5-pin -
High speed 10Gb/s GaAs Photodiode with Transimpedance Amplifier, 50ps Rise Time, 770nm-860nm, 3.3V -
High speed 2.5Gbps GaAs Photodiode with Transimpedance Amplifier, 200ps Rise Time, 770nm-860nm, 3.3V -
High speed 100/155Mbps GaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 3.3V to 5.0V -
High speed 1.25Gbps GaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 770nm-860nm, 3.3V, 4-pin
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Lasermate offers high speed response GaAs PIN photodiode in TO-46 can with high responsivity at 850nm, low dark current and low capacitance.
Lasermate Group, Inc.
19608 Camino De Rosa
Walnut, CA 91789
USA
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