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Miniature 635–980nm laser diode module with circular beam and 10.5mm housing, designed for compact and reliable optical applications. -
The PLA650 Series offers pre-aligned 650nm laser diode modules in a compact ⌀10.5mm housing. Featuring precise beam centering with a tight tolerance of ±0.0573° (±1.0cm at 10m), these modules require no user adjustment—ideal for reliable alignment applications. -
The PLA515 Series features pre-aligned green laser diode modules at 515nm with a ⌀10.5mm housing. The output beam is factory-aligned to the module’s center-line with a tight tolerance of ±0.5°, requiring no user adjustment for quick and reliable deployment. -
- Spectral range 200nm to 1100nm
- 1.2x1.2mm Large active area
- TO-46 with 2mm UV Flat window, 3-pin
- High reliability, low dark current
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- Spectral range 400nm to 1100nm
- High speed up to 2.5GHz
- TO-46 package with 2mm flat window cap
- High reliability, Low capacitance
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- Very fast rise time up to 250ps
- High speed in 3-pin, TO-46 can package
- 0.5x0.5mm diameter Active area
- High reliability, ultra-low dark current
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- 1064nm responsivity up to 0.27mA/mW
- 1.2mm Large active area
- 3-pin, TO-46 package with 2mm flat window cap
- High reliability, Low dark current
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- Spectral range 200nm to 1100nm
- 1mm Large active area, TO-46 can package
- High reliability, low dark current
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Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area. -
Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area.
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Large area InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area.
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InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 455um diameter active area. -
InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 455um diameter active area.
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Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 3mm diameter active area.
Lasermate Group, Inc.
19608 Camino De Rosa
Walnut, CA 91789
USA
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Contact Us
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