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Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area. -
InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area.
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Large area InGaAs PIN photodiode in TO-46 package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area. -
Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um. -
Large area and high responsivity, InGaAs photodiodes in TO-46 package at 0.9um-2.2um with active area ⌀950um.
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Large area and high responsivity, InGaAs photodiodes in TO-39 package at 0.9um-2.2um with active area ⌀1850um. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-39 package with 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 1850um diameter active area.
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InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 950um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 950um diameter active area.
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InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in TO-46 package with 455um diameter active area. -
The TST-M85A426-2H-V2 is a high-performance 1.25Gbps 850nm VCSEL, providing more than 1mW output at 8mA and designed for ST receptacle compatibility. This component offers dependable data transmission for various optical networking needs. -
The TST-M85A426-2H is a high-efficiency 1.25Gbps 850nm VCSEL, delivering more than 1mW output at 6mA, and designed for ST receptacle compatibility. This component ensures reliable data transmission in various optical networking scenarios.
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The TSC-P85A4x6-2 is a 1.25Gbps 850nm VCSEL SC-TOSA, engineered for efficient data transmission. This reliable component is perfect for a range of optical communication applications, ensuring optimal performance. -
The TLC-P85A846-25M is a high-performance 25Gb/s LC connectorized 850nm VCSEL, featuring an FPC and designed for wide operating temperatures. This component provides exceptional data transmission reliability for demanding networking scenarios. -
The TLC-P85A646-10M is a cutting-edge 10Gb/s 850nm VCSEL LC-TOSA featuring an FPC and a wide operating temperature range. This high-speed component delivers exceptional data transmission reliability, making it perfect for advanced networking applications.
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