Highly reliable, high responsivity, 0.9um-1.7um, InGaAs quadrant PIN photodiode chip. Ideal for LIDAR, beam alignment, light spot position detection, and remote optical control applications.
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 1850um diameter active area.
Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area.
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 950um diameter active area.
Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area.
Lasermate provides high responsivity at 850nm, low dark current and low capacitance, planarized and non-hermetic design GaAs photodiode chip for use in 10Gb/s fiber optic data communication applications.
Lasermate offers GaAs photodiode chip with high responsivity at 850nm, low dark current and low capacitance and for use in 4.25Gbps fiber optic data communication applications.
Lasermate offers GaAs photodiode chip with high responsivity at 850nm, low dark current and low capacitance, and designed for use in 2.5Gbps fiber optic data communication applications.
Lasermate offers low dark current, low capacitance GaAs photodiode chip die designed for use in high speed 25Gbps fiber optic data communication applications.
Lasermate offers low dark current, low capacitance GaAs photodiode chip designed for use in high speed 14Gbps data rate fiber optic data communication applications.
High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications.
High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications.
High-performance InGaAs photodiode die in non-hermetic application offering high responsivity, low capacitance and low dark current. Ideal for high speed 10Gb/s applications.
High quality large-area InGaAs PIN photodiode chip with aperture of 300um, low capacitance and low dark current, high responsivity at 1310nm and 1550nm.
Large-area InGaAs PIN photodiode chip with aperture of 1.5mm that exhibits low capacitance, low dark current, and high responsivity at 1310nm and 1550nm.
High quality large-area InGaAs PIN photodiode chip with aperture of 1.0mm, low capacitance and low dark current, high responsivity at 1310nm and 1550nm.
Lasermate offers low dark current, low capacitance GaAs photodiode chip array designed for use in high speed 25Gbps fiber optic data communication applications.
Lasermate offers low dark current, low capacitance GaAs photodiode chip array designed for use in high speed 14Gbps fiber optic data communication applications.
Lasermate offers 640x512 pixel focal plane array (FPA) with 15um pixel pitch and embedded thermoelectric cooler that covers the short wavelength infrared (SWIR) region with selectable number of outputs (2, 4 or 8) and windowing capability which may be read out at up to 18MHz pixel rate.