The PDC-85A2G is a high-performance GaAs PIN photodiode chip designed for 2.5Gbps data transmission. Ideal for fiber optic data communication, it ensures reliable and efficient optical signal reception.
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High-performance InGaAs photodiode die in non-hermetic application offering high responsivity, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
The PDC-85A14G is a high-performance, low dark current, low capacitance GaAs PIN photodiode chip capable of speeds up to 14Gb/s. Perfect for optical data communication applications, it offers exceptional efficiency and reliability in demanding environments. -
The PDC-85A25G is a high-speed GaAs PIN photodiode chip with a 25Gb/s data rate and excellent responsivity at 850nm. Optimized for fiber optic data communication, it delivers reliable performance in high-speed optical transmission systems. -
The PDC-85A4G is a high-speed GaAs PIN photodiode chip designed for 4.25Gbps data transmission. Perfect for fiber optic data communication, it provides efficient and reliable optical signal reception for advanced communication systems. -
The PDC-85B10G is a high-speed GaAs PIN photodiode chip with a 10Gbps data rate, providing reliable and efficient optical signal reception for high-performance fiber optic data communication applications. -
- High responsivity from 400nm to 1100nm
- 10mm Diameter Large active area, Ceramic package
- High reliability, low dark current
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InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area. -
InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 950um diameter active area.
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Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 1850um diameter active area.
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Highly reliable, high responsivity, 0.9um-1.7um, InGaAs quadrant PIN photodiode chip. Ideal for LIDAR, beam alignment, light spot position detection, and remote optical control applications. -
- Response wavelength 940nm
- High sensitivity, low dark current
- High speed response in 3030 package
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High speed, low dark current and low capacitance, InGaAs PIN Photodiode, 1300nm, Dia. 120um Active Area -
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1310nm, 3.3V to 5.0V -
The PDT-A13P4-2GF3 is a high-performance InGaAs PIN Photodiode with an integrated pre-amplifier, designed for applications requiring fast data transmission. With a wavelength range of 1260-1620nm and a data rate of up to 2.5Gbps, this 4-pin TO-46 package component is ideal for optical communication systems.
