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High speed, low dark current, low capacitance, 75um InGaAs photodiode chip designed for long wavelength 2.5Gbps fiber optic application. -
High quality large-area InGaAs PIN photodiode chip with aperture of 300um, low capacitance and low dark current, high responsivity at 1310nm and 1550nm. -
Large-area InGaAs PIN photodiode chip with aperture of 3.0mm, low capacitance and low dark current, high responsivity at 1310nm and 1550nm. -
High-performance InGaAs photodiode die in non-hermetic application offering high responsivity, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications. -
Lasermate offers low dark current, low capacitance GaAs photodiode chip designed for use in high speed 14Gbps data rate fiber optic data communication applications. -
Lasermate offers GaAs photodiode chip with high responsivity at 850nm for use in 1.25Gbps fiber optic data communication applications. -
Lasermate offers low dark current, low capacitance GaAs photodiode chip die designed for use in high speed 25Gbps fiber optic data communication applications. -
Lasermate offers GaAs photodiode chip with high responsivity at 850nm, low dark current and low capacitance, and designed for use in 2.5Gbps fiber optic data communication applications. -
Lasermate offers GaAs photodiode chip with high responsivity at 850nm, low dark current and low capacitance and for use in 4.25Gbps fiber optic data communication applications. -
Lasermate provides high responsivity at 850nm, low dark current and low capacitance, planarized and non-hermetic design GaAs photodiode chip for use in 10Gb/s fiber optic data communication applications. -
- High responsivity from 400nm to 1100nm
- 10mm Diameter Large active area, Ceramic package
- High reliability, low dark current
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- High responsivity from 400nm to 1100nm
- 6mm Large active area, Ceramic package
- High reliability, low dark current
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Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 950um diameter active area.
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Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 1850um diameter active area.
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Highly reliable, high responsivity, 0.9um-1.7um, InGaAs quadrant PIN photodiode chip. Ideal for LIDAR, beam alignment, light spot position detection, and remote optical control applications. -
- Response wavelength 940nm
- High sensitivity, low dark current
- High speed response in 3030 package
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High speed, low dark current and low capacitance, InGaAs PIN Photodiode, 1300nm, Dia. 120um Active Area -
High speed 1.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 1260-1620nm, 3.3V -
High speed 1.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 1260-1620nm, 3.3V -
High speed 1.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 1260-1620nm, 3.3V -
High speed 1.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 1260-1620nm, 3.3V -
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V -
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V -
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V -
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V -
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
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High speed 10Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with long cap lens, 50ps Rise Time, 1260-1620nm, 3.3V -
High speed 11.3Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with short cap lens, 50ps Rise Time, 1260-1620nm, 3.3V
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High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V -
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V
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High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1260-1620nm, 3.3V to 5.0V -
High speed 25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 21ps Rise Time, 1260-1360nm, 3.3V -
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V -
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V -
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
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High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V -
High speed 2.5Gbps InGaAs Photodiode with Transimpedance Amplifier, 170ps Rise Time, 1260-1620nm, 3.3V
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High speed 4.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 115ps Rise Time, 1260-1620nm, 3.3V -
High speed 4.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 150ps (max) Rise Time, 1260-1620nm, 3.3V
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High speed 6.25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 85ps Rise Time, 1260-1620nm, 3.3V -
Lasermate offers high speed response GaAs PIN photodiode in TO-46 can with high responsivity at 850nm, low dark current and low capacitance. -
High speed 1.25Gbps GaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 770nm-860nm, 3.3V, 4-pin -
High speed 100/155Mbps GaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 3.3V to 5.0V -
High speed 2.5Gbps GaAs Photodiode with Transimpedance Amplifier, 200ps Rise Time, 770nm-860nm, 3.3V -
High speed 10Gb/s GaAs Photodiode with Transimpedance Amplifier, 50ps Rise Time, 770nm-860nm, 3.3V -
High speed 10Gb/s GaAs Photodiode with Transimpedance Amplifier, 50ps Rise Time, 770nm-860nm, 3.3V
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High speed 1.25Gbps GaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 770nm-860nm, 3.3V, 5-pin -
High speed 4.25Gbps GaAs Photodiode with Transimpedance Amplifier, 135ps Rise Time, 770nm-860nm, 3.3V -
- 1064nm responsivity up to 0.27mA/mW
- 1.2mm Large active area
- 2-pin, TO-46 package with ball lens cap
- High reliability, Low dark current
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- 1064nm responsivity up to 0.27mA/mW
- 1.2mm Large active area
- 3-pin, TO-46 package with ball lens cap
- High reliability, Low dark current
Lasermate Group, Inc.
19608 Camino De Rosa
Walnut, CA 91789
USA
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