LIS512M25S917

0.9–1.7µm 512x1 Near-Infrared Linear InGaAs Image Sensor with TEC

LIS512M25S917

The LIS512M25S917 is a 512×1 pixel near-infrared linear InGaAs image sensor with high quantum efficiency, fast 22MHz readout, and built-in temperature monitoring. Perfect for SWIR imaging, semiconductor inspection, and spectrophotometry.

Description

The LIS512M25S917 is a 512×1 pixel near-infrared linear InGaAs image sensor with high quantum efficiency, fast 22MHz readout, and built-in temperature monitoring. Perfect for SWIR imaging, semiconductor inspection, and spectrophotometry.

Features

  • 512×1 pixel linear InGaAs array, pixel size 25×25µm
  • 28-pin metal DIP package
  • Spectral range: 0.9–1.7µm
  • Built-in temperature sensor
  • Minimum pixel operability >99%
  • Quantum efficiency >70%
  • Snapshot ITR/IWR readout
  • One output with up to 22MHz pixel rate

Applications

  • Shortwave infrared (SWIR) imaging
  • Semiconductor inspection and process monitoring
  • Sorting and recycling systems
  • Near-infrared spectrophotometry

Additional information

Status

Active

Number of Effective Pixels

512

Pixel Size

25umx25um

Pixel Pitch

25um

Image Size

15.3mmx4.5mm

Spectral Response Range

900-1700nm

Line Rate

40KHz

Documentation

Data Sheet

[PDF] LIS512M25S917 – 0.9–1.7µm 512×1 Near-Infrared Linear InGaAs Image Sensor Product Datasheet

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