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  • The PDA4-85A112G is a low dark current, low capacitance 1x4 GaAs PIN photodiode chip array designed for high-speed 112Gb/s PAM4 (56Gbd) optical data transmission. Ideal for telecom and data communication applications, it ensures reliable and efficient performance in multi-channel systems.
  • The PDA4-85A14G is a low dark current, low capacitance 1x4 GaAs PIN photodiode chip array designed for high-speed 14Gb/s optical data transmission. Ideal for telecom and data communication applications, it ensures reliable and efficient performance in multi-channel systems.
  • The PDA4-85A25G is a 1x4 GaAs PIN photodiode chip array, capable of 25Gb/s high-speed optical data transmission. Ideal for advanced telecom and data communication applications, it provides superior performance and reliability for multi-channel systems.
  • The PDA4-85A2G is a 1x4 GaAs PIN photodiode chip array supporting 2.5/3.125Gbps speeds. Designed for fiber optic data communication, it features low dark current, low capacitance, and two top-side wire bond pads per channel for efficient and reliable performance.
  • The PDA4-85A56G is a low dark current, low capacitance 1x4 GaAs PIN photodiode chip array designed for high-speed 56Gb/s PAM4 (28Gbd) optical data transmission. Ideal for telecom and data communication applications, it ensures reliable and efficient performance in multi-channel systems.
  • The PDA4-85B14G is a low dark current, low capacitance 1x4 GaAs PIN photodiode chip array designed for high-speed 14Gb/s optical data transmission. Ideal for telecom and data communication applications, it ensures reliable and efficient performance in multi-channel systems.
  • 2GHz InGaAs PIN Photodiode Chip in 1×N linear array with 250μm channel pitch, low dark current, optimized for fiber optic communication.
  • High quality large-area InGaAs PIN photodiode chip with aperture of 1.0mm, low capacitance and low dark current, high responsivity at 1310nm and 1550nm.
  • High-performance InGaAs photodiode die offering high responsivity, low capacitance and low dark current. Ideal for high speed 10Gb/s applications.
  • Large-area InGaAs PIN photodiode chip with aperture of 1.5mm that exhibits low capacitance, low dark current, and high responsivity at 1310nm and 1550nm.
  • High speed, low dark current, low capacitance, 75um InGaAs photodiode chip designed for long wavelength 2.5Gbps fiber optic application.
  • High speed, low dark current, low capacitance, 75um InGaAs photodiode chip designed for long wavelength 2.5Gbps fiber optic application.
  • High quality large-area InGaAs PIN photodiode chip with aperture of 300um, low capacitance and low dark current, high responsivity at 1310nm and 1550nm.
  • Large-area InGaAs PIN photodiode chip with aperture of 3.0mm, low capacitance and low dark current, high responsivity at 1310nm and 1550nm.
  • High-performance InGaAs photodiode die in non-hermetic application offering high responsivity, low capacitance and low dark current. Ideal for high speed 10Gb/s applications.
  • High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications.
  • High-performance InGaAs photodiode die offering high responsivity at 1310nm/1550nm, low capacitance and low dark current. Ideal for high speed 10Gb/s applications.
  • The PDC-85A10G is a high-speed GaAs PIN photodiode chip with a 10Gbps data rate, providing reliable and efficient optical signal reception for high-performance fiber optic data communication applications.
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