The PDC-85A2G is a high-performance GaAs PIN photodiode chip designed for 2.5Gbps data transmission. Ideal for fiber optic data communication, it ensures reliable and efficient optical signal reception.
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The PDC-85A14G is a high-performance, low dark current, low capacitance GaAs PIN photodiode chip capable of speeds up to 14Gb/s. Perfect for optical data communication applications, it offers exceptional efficiency and reliability in demanding environments. -
The PDC-85A25G is a high-speed GaAs PIN photodiode chip with a 25Gb/s data rate and excellent responsivity at 850nm. Optimized for fiber optic data communication, it delivers reliable performance in high-speed optical transmission systems. -
The PDC-85A4G is a high-speed GaAs PIN photodiode chip designed for 4.25Gbps data transmission. Perfect for fiber optic data communication, it provides efficient and reliable optical signal reception for advanced communication systems. -
The PDC-85B10G is a high-speed GaAs PIN photodiode chip with a 10Gbps data rate, providing reliable and efficient optical signal reception for high-performance fiber optic data communication applications. -
The PDC-85C10G is a high-speed GaAs PIN photodiode chip with a 10Gbps data rate, providing reliable and efficient optical signal reception for high-performance fiber optic data communication applications. -
- High responsivity from 400nm to 1100nm
- 10mm Diameter Large active area, Ceramic package
- High reliability, low dark current
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InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area. -
InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 950um diameter active area.
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Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area.
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Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 1850um diameter active area.
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Highly reliable, high responsivity, 0.9um-1.7um, InGaAs quadrant PIN photodiode chip. Ideal for LIDAR, beam alignment, light spot position detection, and remote optical control applications. -
High speed, low dark current and low capacitance, InGaAs PIN Photodiode, 1300nm, Dia. 120um Active Area -
1.25Gbps InGaAs PIN Photodiode with AGC Pre-Amplifier in 4-Pin TO-46 package, optimized for 1310nm/1550nm optical fiber communications. -
1.25Gbps InGaAs PIN + AGC Pre-Amplifier Photodiode in TO-46 Package, Short Cap Lens, +3.3V Supply -
High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1310nm, 3.3V to 5.0V -
High-speed 2.5Gbps InGaAs PIN photodiode with integrated TIA and AGC pre-amplifier in a 4-pin TO-46 package, optimized for 1310nm/1550nm optical fiber communication. -
10Gbps InGaAs PIN Photodiode with Pre-Amplifier in 5-Pin TO-46 package, long cap lens, optimized for 1310nm/1550nm optical fiber communications. -
High speed 11.3Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with short cap lens, 50ps Rise Time, 1260-1620nm, 3.3V -
High speed 11.3Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with long cap lens, 50ps Rise Time, 1260-1620nm, 3.3V -
High speed 25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 21ps Rise Time, 1260-1360nm, 3.3V -
The PDT-A13P5-2GF3 is a high-performance InGaAs PIN Photodiode with an integrated pre-amplifier, designed for applications requiring fast data transmission. With a wavelength range of 1260-1620nm and a data rate of up to 2.5Gbps, this 5-pin TO-46 package component is ideal for optical communication systems.
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High speed 4.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 150ps (max) Rise Time, 1260-1620nm, 3.3V -
High speed 6.25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 85ps Rise Time, 1260-1620nm, 3.3V -
Lasermate offers high speed response GaAs PIN photodiode in TO-46 can with high responsivity at 850nm, low dark current and low capacitance. -
High speed 1.25Gbps GaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 770nm-860nm, 3.3V, 4-pin -
High speed 100/155Mbps GaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 3.3V to 5.0V -
High speed 2.5Gbps GaAs Photodiode with Transimpedance Amplifier, 200ps Rise Time, 770nm-860nm, 3.3V -
High speed 10Gb/s GaAs Photodiode with Transimpedance Amplifier, 50ps Rise Time, 770nm-860nm, 3.3V -
High speed 1.25Gbps GaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 770nm-860nm, 3.3V, 5-pin
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High speed 4.25Gbps GaAs Photodiode with Transimpedance Amplifier, 135ps Rise Time, 770nm-860nm, 3.3V -
- 1064nm responsivity up to 0.27mA/mW
- 1.2mm Large active area
- 3-pin, TO-46 package with ball lens cap
- High reliability, Low dark current
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- Very fast rise time up to 250ps
- High speed in TO-46 can package with ball lens cap
- 0.5x0.5mm diameter Active area
- High reliability, ultra-low dark current
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- Spectral range 400nm to 1100nm
- High speed up to 2.5GHz
- TO-46 package with ball lens cap
- High reliability, Low capacitance
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- 650nm responsivity up to 0.44mA/mW
- 2.5mm Large active area
- 3-pin, TO-5 can package
- High reliability, low dark current
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- 1064nm responsivity up to 0.32mA/mW
- 3.2mm Large active area, TO-5 can package
- High reliability, low dark current
