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High speed 6.25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 85ps Rise Time, 1260-1620nm, 3.3V -
High speed 4.25Gbps InGaAs Photodiode with Transimpedance Amplifier, 150ps (max) Rise Time, 1260-1620nm, 3.3V -
The PDT-A13P5-2GF3 is a high-performance InGaAs PIN Photodiode with an integrated pre-amplifier, designed for applications requiring fast data transmission. With a wavelength range of 1260-1620nm and a data rate of up to 2.5Gbps, this 5-pin TO-46 package component is ideal for optical communication systems. -
High speed 25Gb/s InGaAs Photodiode with Transimpedance Amplifier, 21ps Rise Time, 1260-1360nm, 3.3V -
High speed 11.3Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with long cap lens, 50ps Rise Time, 1260-1620nm, 3.3V -
High speed 11.3Gb/s InGaAs Photodiode with Transimpedance Amplifier, TO-46 with short cap lens, 50ps Rise Time, 1260-1620nm, 3.3V -
10Gbps InGaAs PIN Photodiode with Pre-Amplifier in 5-Pin TO-46 package, long cap lens, optimized for 1310nm/1550nm optical fiber communications. -
High-speed 2.5Gbps InGaAs PIN photodiode with integrated TIA and AGC pre-amplifier in a 4-pin TO-46 package, optimized for 1310nm/1550nm optical fiber communication.
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High speed 100/155Mbps InGaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 1310nm, 3.3V to 5.0V -
1.25Gbps InGaAs PIN + AGC Pre-Amplifier Photodiode in TO-46 Package, Short Cap Lens, +3.3V Supply -
1.25Gbps InGaAs PIN Photodiode with AGC Pre-Amplifier in 4-Pin TO-46 package, optimized for 1310nm/1550nm optical fiber communications. -
High speed, low dark current and low capacitance, InGaAs PIN Photodiode, 1300nm, Dia. 120um Active Area -
Highly reliable, high responsivity, 0.9um-1.7um, InGaAs quadrant PIN photodiode chip. Ideal for LIDAR, beam alignment, light spot position detection, and remote optical control applications. -
Large active area InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 1850um diameter active area. -
Large area InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 1850um diameter active area.
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InGaAs photodiodes with high responsivity in 0.9um~1.7um wavelength spectral range, low leakage current, high shunt resistance, in ceramic package with 950um diameter active area.
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InGaAs PIN photodiode in ceramic package that features high responsivity in 0.6um~1.7um wavelength spectral range, low leakage current, high shunt resistance, VIS-SWIR operation, and 950um diameter active area.
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- High responsivity from 400nm to 1100nm
- 10mm Diameter Large active area, Ceramic package
- High reliability, low dark current
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USA
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