Gallium Arsenide (GaAs) Photodiodes for High-Efficiency Light Detection
The GaAs Photodiodes category features high-speed, high-efficiency light detectors made from gallium arsenide (GaAs), ideal for advanced applications requiring fast response times and high sensitivity. GaAs photodiodes are optimized for detecting light in the near-infrared (NIR) spectrum, making them well-suited for optical communication, LIDAR, laser detection, and high-speed data transmission. These photodiodes offer low noise, excellent temperature stability, and high reliability, ensuring consistent performance in demanding environments. Whether for industrial, aerospace, or research applications, GaAs photodiodes deliver precise and efficient light detection.
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Model | PD Material/Type | Spectral Response Range | Peak Sensitivity Wavelength | Bandwidth | Rise/Fall Time | Temperature | Power Supply | Package | |
|---|---|---|---|---|---|---|---|---|---|
 | GaAs PIN photodiode | 1.5GHz (min) | TO-46 | ||||||
 | GaAs PIN photodiode with preamplifier | 770-860nm | 850nm | 1.5GHz | 200ps (max) | -40°C to 85°C | 3.3V | TO-46 | |
 | GaAs PIN photodiode with preamplifier | 770-860nm | 850nm | 2.5GHz | 135ps | -40°C to 85°C | 3.3V | TO-46 | |
 | GaAs PIN photodiode with preamplifier | 850nm | 115MHz (min) | 4.5ns (max) | -40°C to 85°C | 3.0V to 5.5V | TO-46 | ||
 | GaAs PIN photodiode with preamplifier | 770-860nm | 850nm | 7GHz | 50ps | -40°C to 85°C | 3.3V | TO-46 | |
 | GaAs PIN photodiode with preamplifier | 770-860nm | 850nm | 700MHz (min) | 400ps (max) | -40°C to 85°C | 3.3V | TO-46 |