InGaAs Avalanche Photodiodes (APDs) are specialized detectors optimized for the near-infrared (NIR) region, 1100–1650 nm, making them ideal for fiber optic communications, LiDAR, and precision sensing applications. Using avalanche gain, InGaAs APDs provide enhanced sensitivity for detecting very weak optical signals while maintaining low noise performance.

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Model
PD Material/Type
Spectral Response Range
Bandwidth
Responsivity
Package
apd a13p5 10gc3
APD-A13P5-10GC3
InGaAs APD-TIA
1260-1600nm
6.2GHz
13mV/uW @ 1550nm
TO-46
apd a13p5 1ga3 ingaas apd with pre amplifier, 400ps rise time, 1260 1620nm, to 46, 1.25gbps
APD-A13P5-1MC3
InGaAs APD-TIA
1260-1620nm
110MHz
TO-46
apd a13p5 2gc3
APD-A13P5-2GC3
InGaAs APD-TIA
1260-1620nm
1.4GHz
50mV/uW @ 1490nm
TO-46, short cap lens
apd a13p6 25ga3
APD-A13P6-25GA3
InGaAs APD-TIA
1260-1600nm
17GHz
30mV/uW @ 1310nm
TO-46
photodiode clcc package
APD-CS916200
InGaAs APD
950-1650nm
700MHz
9A/W @ 1.55um
Ceramic
APD-F13A3
InGaAs APD
950-1650nm
0.8GHz
0.9A/W @ 1.55um
⋅
9A/W @ 1.55um
TO-46
APD-F13A5
InGaAs APD
950-1650nm
0.8GHz
0.9A/W @ 1.55um
⋅
9A/W @ 1.55um
TO-46
rapd m13p825g 3v
RAPD-M13P825G-3V
InGaAs APD-TIA
1260-1600nm
17GHz
30mV/uW @ 1310nm
Pigtail