PDT-F08A5900-SI – Silicon PIN Photodiode, 400-1100nm, 5.9mm Active Area, TO-8

PDT-F08A5900-SI – Silicon PIN Photodiode, 400-1100nm, 5.9mm Active Area, TO-8

  • 405nm responsivity about 0.2mA/mW
  • 5.9mm Ultra large active area, TO-8 can package
  • High reliability, low dark current

Description

The Lasermate PDT-F08A5900-SI is a high reliability, low dark current, 5.9mm diameter active area Silicon PIN photodiode with high sensitivity from 400nm to 1100nm spectral range. The detector is housed in hermetic TO-8 package.

[PDF] PDT-F08A5900-SI – Silicon PIN Photodiode, 400-1100nm, 5.9mm Active Area, TO-8 Product Specifications

Features

  • High reliability
  • Low dark current
  • Spectral range 400nm to 1100nm
  • Ultra large active diameter 5.9×5.9mm
  • 405nm responsivity about 0.2mA/mW
  • Hermetic TO-8 can package

Applications

  • Optical sensor
  • Optical power meter
  • Spectrophotometry/CT scan
  • Industrial automatic control
  • IR/laser light monitoring
  • Fluorescence detector
  • Medical equipment

Specifications

Wavelength: 400-1100nm

Photodiode Material/Type: Silicon PIN Photodiode

Active Diameter: 5.9×5.9mm

Package: TO-8 Can

Dark Current: 0.05nA@0V, 1.2nA@5V

Responsivity: 0.23mA/mW @Vr=5V, λ=405nm; 0.42mA/mW @Vr=5V, λ=650nm; 0.50mA/mW @Vr=5V, λ=850nm; 0.05mA/mW @Vr=5V, λ=1064nm

Capacitance: 3000pF @ 0V, 600pF @ 5V

Breakdown Voltage: 60V

Documentation

DATA SHEET

[PDF] PDT-F08A5900-SI – Silicon PIN Photodiode, 400-1100nm, 5.9mm Active Area, TO-8 Product Specifications

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