PDT-B411A500-SI – Fast Silicon PIN Photodiode, 400-1100nm, 250ps Rise Time, 0.5×0.5mm Active Area, TO-46

PDT-B411A500-SI – Fast Silicon PIN Photodiode, 400-1100nm, 250ps Rise Time, 0.5×0.5mm Active Area, TO-46

  • Very fast rise time up to 250ps
  • High speed in TO-46 can package with ball lens cap
  • 0.5×0.5mm diameter Active area
  • High reliability, ultra-low dark current

Description

The Lasermate PDT-B411A500-SI is a high reliability, ultra-low dark current, fast rise time, 0.5mm diameter active area Silicon PIN photodiode with high sensitivity from 400nm to 1100nm spectral range. The detector is housed in hermetic TO-46 package with ball lens cap.

[PDF] PDT-x411A500-SIx – Fast Silicon PIN Photodiode, 400-1100nm, 250ps Rise Time, 0.5×0.5mm Active Area, TO-46 Product Specifications

Features

  • High reliability
  • Ultra-low dark current
  • Spectral range 400nm to 1100nm
  • Active diameter 0.5×0.5mm
  • Very fast rise time up to 250ps
  • Hermetic TO-46 can package

Applications

  • Optical sensor
  • High speed light pulse test
  • Laser range finder and laser lidar
  • Industrial automatic control
  • Space light detection equipment

Specifications

Wavelength: 400-1100nm

Photodiode Material/Type: Silicon PIN Photodiode

Active Diameter: 0.5×0.5mm

Package: TO-46 Can

Dark Current: 0.1pA@0V, 50pA@5V

Responsivity: 0.1mA/mW @Vr=5V, λ=405nm; 0.35mA/mW @Vr=5V, λ=650nm; 0.45mA/mW @Vr=5V, λ=850nm; 0.20mA/mW @Vr=5V, λ=1064nm

Capacitance: 15pF @ 0V,1.5pF @ 5V

Breakdown Voltage: 120V

Documentation

DATA SHEET

[PDF] PDT-x411A500-SIx – Fast Silicon PIN Photodiode, 400-1100nm, 250ps Rise Time, 0.5×0.5mm Active Area, TO-46 Product Specifications

Other Products Relating to PDT-B411A500-SI

> PDT-LF411A500-SI3 – Fast Silicon PIN Photodiode, 400-1100nm, 250ps Rise Time, 0.5×0.5mm Active Area, TO-46

> PDT-B411A500-SIS – Fast Silicon PIN Photodiode, 400-1100nm, 250ps Rise Time, 0.5×0.5mm Active Area, TO-46

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