The PDA4-85A112G is a low dark current, low capacitance 1×4 GaAs PIN photodiode chip array designed for high-speed 112Gb/s PAM4 (56Gbd) optical data transmission. Ideal for telecom and data communication applications, it ensures reliable and efficient performance in multi-channel systems.
PDA4-85A112G
Description
The PDA4-85A112G is a high-speed, non-hermetic 1×4 GaAs PIN photodiode array designed for 112Gbps PAM4 (56Gbd) optical data transmission systems. With a compact 250μm pitch, this array offers excellent alignment compatibility with standard fiber ribbons. Optimized for operation at 850nm, it delivers high responsivity, low dark current, and low capacitance, making it ideal for short-reach, high-speed data communication.
PDA4-85A112G – Non-Hermetic 112Gbps PAM4 (56Gbd) GaAs PIN Photodiode Array
Features
- 1×4 array bar with 250um pitch
- High responsivity at 850nm
- Optimized for fiber optic application
- Low dark current and low capacitance
- Non-hermetic design
Applications
- High speed data communications
- Fiber channel
- Gigabit ethernet
Additional information
| Status | Active |
|---|---|
| Data Rate | 112Gb/s |
| Package | Bare Die |
| Number of Channels | 4 |
| Peak Sensitivity Wavelength | 850nm |
| Active Area | Dia. 35um |
| Responsivity | 0.6A/W @ 850nm |
| Size of Photodiode | 990um x 220um x 150um |
Documentation
Data Sheet
[PDF] PDA4-85A112G – Non-Hermetic 112Gbps PAM4 (56Gbd) GaAs PIN Photodiode Array Datasheet