Gallium Arsenide (GaAs) Photodiodes for High-Efficiency Light Detection
The GaAs Photodiodes category features high-speed, high-efficiency light detectors made from gallium arsenide (GaAs), ideal for advanced applications requiring fast response times and high sensitivity. GaAs photodiodes are optimized for detecting light in the near-infrared (NIR) spectrum, making them well-suited for optical communication, LIDAR, laser detection, and high-speed data transmission. These photodiodes offer low noise, excellent temperature stability, and high reliability, ensuring consistent performance in demanding environments. Whether for industrial, aerospace, or research applications, GaAs photodiodes deliver precise and efficient light detection.
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Lasermate offers high speed response GaAs PIN photodiode in TO-46 can with high responsivity at 850nm, low dark current and low capacitance. -
High speed 1.25Gbps GaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 770nm-860nm, 3.3V, 4-pin -
High speed 100/155Mbps GaAs Photodiode with Transimpedance Amplifier, 4.5ns Rise Time, 3.3V to 5.0V -
High speed 2.5Gbps GaAs Photodiode with Transimpedance Amplifier, 200ps Rise Time, 770nm-860nm, 3.3V -
High speed 10Gb/s GaAs Photodiode with Transimpedance Amplifier, 50ps Rise Time, 770nm-860nm, 3.3V -
High speed 10Gb/s GaAs Photodiode with Transimpedance Amplifier, 50ps Rise Time, 770nm-860nm, 3.3V
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High speed 1.25Gbps GaAs Photodiode with Transimpedance Amplifier, 400ps Rise Time, 770nm-860nm, 3.3V, 5-pin -
High speed 4.25Gbps GaAs Photodiode with Transimpedance Amplifier, 135ps Rise Time, 770nm-860nm, 3.3V
