APDE-F05A800-SIB-1 – Enhanced Si Avalanche Photodiode, 400-1100nm, ⌀800um Active Area, TO-5

APDE-F05A800-SIB-1 – Enhanced Si Avalanche Photodiode, 400-1100nm, ⌀800um Active Area, TO-5

  • High responsivity from 400nm to 1100nm
  • High Gain up to M=400, TO-5 Can Package
  • High reliability, low dark current

Description

The Lasermate APDE-F05A800-SIB-1 is a high reliability, low dark current, 800um dia. active area enhanced Silicon avalanche photodiode (APD) with high sensitivity from 400nm to 1100nm. The detector is housed in TO-5 package with flat window, dia. 8.26mm Nickel cap and with high gain up to M=400.

[PDF] APDE-F05A800-SIx-x – Enhanced Si Avalanche Photodiode, 400-1100nm, ⌀800um Active Area, TO-5 Product Specifications

Features

  • High reliability, low dark current
  • Top illumination planar APD
  • 800um Active Area
  • High Gain up to M=400
  • Spectral range 400nm to 1100nm
  • 1064nm responsivity 0.37A/W
  • Hermetic TO-5 can package with flat window, Dia. 8.26mm Nickel cap

Applications

  • Ultra-weak pulse optical detection
  • Laser lidar, laser range finder
  • Optical fiber sensor, OTDR
  • High resolution optical coherence tomography
  • Scientific analysis and experiment

Specifications

Wavelength: 400-1100nm

Photodiode Material/Type: Silicon APD

Active Diameter: 800um

Package: TO-5 Can

Dark Current: 3nA

Responsivity: 0.65A/W @ M=1, λ=905nm, 1uw; 0.37A/W @ M=1, λ=1064nm, 1uw

Capacitance: 1.5pF

Breakdown Voltage: 220-400V

Documentation

DATA SHEET

[PDF] APDE-F05A800-SIx-x – Enhanced Si Avalanche Photodiode, 400-1100nm, ⌀800um Active Area, TO-5 Product Specifications

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